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Volumn 287, Issue 2, 2006, Pages 504-508

Growth and characterization of defect free GaAs nanowires

Author keywords

A1. Defects; A1. Interfaces; A1. Nanostructures; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; STACKING FAULTS; VAPOR PHASE EPITAXY;

EID: 30344485981     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.075     Document Type: Conference Paper
Times cited : (91)

References (15)
  • 6
    • 0002992361 scopus 로고
    • VLS mechanism of crystal growth
    • A.P. Levitt Wiley New York
    • R.S. Wagner VLS mechanism of crystal growth A.P. Levitt Whisker Technology 1970 Wiley New York 47
    • (1970) Whisker Technology , pp. 47
    • Wagner, R.S.1
  • 7
    • 0002999869 scopus 로고
    • Growth of whiskers by the vapor-liquid-solid mechanism
    • E. Kaldis North-Holland Amsterdam
    • E.I. Givargizov Growth of whiskers by the vapor-liquid-solid mechanism E. Kaldis Current Topics in Materials Science 1978 North-Holland Amsterdam 79
    • (1978) Current Topics in Materials Science , pp. 79
    • Givargizov, E.I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.