Toward nanowire electronics

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2827-2845

  Appenzeller, Joerg ^a   Knoch, Joachim ^b,c   Björk, Mikael T ^b   Riel, Heike ^b   Schmid, Heinz ^b   Riess, Walter ^b  

^a PURDUE UNIVERSITY   (United States)

^b IBM RESEARCH ZURICH   (Switzerland)

^c TU DORTMUND UNIVERSITY   (Germany)

Author keywords

Impact ionization; MOSFET; Nanowire FET; Nanowire growth; Schottky barrier; Steep slope transistors; Tunnel FET; VLS growth

Indexed keywords

FIELD EFFECT TRANSISTORS; IONIZATION; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; TRANSISTORS; TRANSPORT PROPERTIES; TUNNELS;

MOSFET; NANOWIRE FET; NANOWIRE GROWTH; SCHOTTKY-BARRIER; STEEP SLOPE TRANSISTORS; VLS GROWTH;

IMPACT IONIZATION;

EID: 56549107714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2008011     Document Type: Article

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