Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition

Nanotechnology

Volumn 17, Issue 23, 2006, Pages 5773-5780

  Wang, George T ^a   Talin, A Alec ^a   Werder, Donald J ^b   Creighton, J Randall ^a   Lai, Elaine ^a   Anderson, Richard J ^a   Arslan, Ilke ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SAPPHIRE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLOGRAPHIC MATCH; GROWTH TEMPERATURE; NANOWIRES; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 33846107443     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/23/011     Document Type: Article

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