메뉴 건너뛰기




Volumn 1, Issue 2, 2002, Pages 106-110

Single gallium nitride nanowire lasers

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; MICROSTRUCTURE; OPTICAL MICROSCOPY; SEMICONDUCTOR LASERS; STIMULATED EMISSION;

EID: 0038137285     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat728     Document Type: Article
Times cited : (1172)

References (29)
  • 1
    • 0035804248 scopus 로고    scopus 로고
    • Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    • Duan, X., Huang, Y., Cui, Y., Wang, J. & Lieber, C. M. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, 66-69 (2001).
    • (2001) Nature , vol.409 , pp. 66-69
    • Duan, X.1    Huang, Y.2    Cui, Y.3    Wang, J.4    Lieber, C.M.5
  • 2
    • 0035943358 scopus 로고    scopus 로고
    • Highly polarised photoluminescence and photodetection from single indium phosphide nanowires
    • Wang, J., Gudiksen, M. S., Duan, X., Cui, Y. & Lieber, C. M. Highly polarised photoluminescence and photodetection from single indium phosphide nanowires. Science 293, 1455-1457 (2001).
    • (2001) Science , vol.293 , pp. 1455-1457
    • Wang, J.1    Gudiksen, M.S.2    Duan, X.3    Cui, Y.4    Lieber, C.M.5
  • 3
    • 0035827304 scopus 로고    scopus 로고
    • Room-temperature ultraviolet nanowire nanolasers
    • Huang, M. H. et al. Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897-1899 (2001).
    • (2001) Science , vol.292 , pp. 1897-1899
    • Huang, M.H.1
  • 4
    • 0035936202 scopus 로고    scopus 로고
    • Single nanowire lasers
    • Johnson, J. C. et al. Single nanowire lasers. J. Phys. Chem. B 105, 11387-11390 (2001).
    • (2001) J. Phys. Chem. B , vol.105 , pp. 11387-11390
    • Johnson, J.C.1
  • 5
    • 0000635547 scopus 로고    scopus 로고
    • Nonlinear optical mixing in single zinc oxide nanowires
    • Johnson, J. C. et al. Nonlinear optical mixing in single zinc oxide nanowires. Nano Lett. 2, 279-283 (2002).
    • (2002) Nano Lett. , vol.2 , pp. 279-283
    • Johnson, J.C.1
  • 6
    • 21544461610 scopus 로고
    • Large band-gap SiC, III-V Nitride, and II-VI ZnSe-based semiconductor device technologies
    • Morkoc, H. et al. Large band-gap SiC, III-V Nitride, and II-VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 76, 1363-1398 (1994).
    • (1994) J. Appl. Phys. , vol.76 , pp. 1363-1398
    • Morkoc, H.1
  • 7
    • 21544458581 scopus 로고
    • High-power InGaN/GaN double-heterostructure violet light emitting diodes
    • Nakamura, S., Senoh, M. & Mukai, T. High-power InGaN/GaN double-heterostructure violet light emitting diodes. Appl. Phys. Lett. 62, 2390-2392 (1993).
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 2390-2392
    • Nakamura, S.1    Senoh, M.2    Mukai, T.3
  • 8
    • 0032620386 scopus 로고    scopus 로고
    • Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
    • Chang, S., Rex, N. B., Chang, R. K., Chong, G. & Guido, L. J. Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities. Appl. Phys. Lett. 75, 166-168 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 166-168
    • Chang, S.1    Rex, N.B.2    Chang, R.K.3    Chong, G.4    Guido, L.J.5
  • 9
    • 36449001665 scopus 로고
    • Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
    • Yang, X. H., Schmidt, T. J., Shan, W. & Song, J. J. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire. Appl. Phys. Lett. 66, 1-3 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 1-3
    • Yang, X.H.1    Schmidt, T.J.2    Shan, W.3    Song, J.J.4
  • 12
    • 0001403767 scopus 로고    scopus 로고
    • Ch. 5 (eds Campillo, A. J. & Chang, R. K.) (World Scientific, Singapore)
    • Campillo, A. J. & Chang, R. K. in Optical Processes in Microcavities Ch. 5 (eds Campillo, A. J. & Chang, R. K.) 167-208 (World Scientific, Singapore, 1996).
    • (1996) Optical Processes in Microcavities , pp. 167-208
    • Campillo, A.J.1    Chang, R.K.2
  • 13
    • 0142227546 scopus 로고
    • Resonance structure of Mie scattering: Distance between resonances
    • Chylek, P. Resonance structure of Mie scattering: distance between resonances. J. Opt. Soc. Am. A 1, 822-830 (1984).
    • (1984) J. Opt. Soc. Am. A , vol.1 , pp. 822-830
    • Chylek, P.1
  • 14
    • 0030189172 scopus 로고    scopus 로고
    • Quantum boxes as active probes for photonic microstructrues: The pillar microcavity case
    • Gerard, J. M. et al. Quantum boxes as active probes for photonic microstructrues: the pillar microcavity case. Appl. Phys. Lett. 69, 449-451 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 449-451
    • Gerard, J.M.1
  • 15
    • 0034639432 scopus 로고    scopus 로고
    • Laser-assisted catalytic growth of single crystal GaN nanowires
    • Duan, X. & Lieber, C. M. Laser-assisted catalytic growth of single crystal GaN nanowires. J. Am. Chem. Soc. 122, 188-189 (2000).
    • (2000) J. Am. Chem. Soc. , vol.122 , pp. 188-189
    • Duan, X.1    Lieber, C.M.2
  • 16
    • 0030854137 scopus 로고    scopus 로고
    • Synthesis of gallium nitride nanorods through a carbon nanotubeconfined reaction
    • Han, W., Fan, S., Li, Q. & Hu, Y. Synthesis of gallium nitride nanorods through a carbon nanotubeconfined reaction. Science 277, 1287-1289 (1997).
    • (1997) Science , vol.277 , pp. 1287-1289
    • Han, W.1    Fan, S.2    Li, Q.3    Hu, Y.4
  • 17
    • 0035126240 scopus 로고    scopus 로고
    • Catalytic growth of zinc oxide nanowires by vapor transport
    • Huang, M. H. et al. Catalytic growth of zinc oxide nanowires by vapor transport. Adv. Mater. 13, 113-116 (2001).
    • (2001) Adv. Mater. , vol.13 , pp. 113-116
    • Huang, M.H.1
  • 18
    • 0002884855 scopus 로고    scopus 로고
    • Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700K
    • Bidnyk, S., Schmidt, T. J., Little, B. D. & Song, J. J. Near-threshold gain mechanisms in GaN thin films in the temperature range of 20-700K. Appl. Phys. Lett. 74, 1-3 (1999).
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 1-3
    • Bidnyk, S.1    Schmidt, T.J.2    Little, B.D.3    Song, J.J.4
  • 19
    • 0013126603 scopus 로고    scopus 로고
    • Nanocrystalline gallium nitride thin films
    • Preschilla, N. A. et al. Nanocrystalline gallium nitride thin films. Appl. Phys. lett. 77, 1861-1863 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 1861-1863
    • Preschilla, N.A.1
  • 20
    • 0041634607 scopus 로고    scopus 로고
    • Gain analysis for surface emission by optical pumping of wurtzite GaN
    • Domen, K., Kondo, K., Kuramata, A. & Tanahashi, T. Gain analysis for surface emission by optical pumping of wurtzite GaN. Appl. Phys. Lett. 69, 94-96 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 94-96
    • Domen, K.1    Kondo, K.2    Kuramata, A.3    Tanahashi, T.4
  • 21
    • 0004486137 scopus 로고    scopus 로고
    • Realization and optical characterization of etched mirror facets in GaN cavities
    • Binet, F. et al. Realization and optical characterization of etched mirror facets in GaN cavities. Appl. Phys. Lett. 72, 960-962 (1998).
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 960-962
    • Binet, F.1
  • 22
    • 0000444445 scopus 로고    scopus 로고
    • High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
    • Binet, F., Duboz, J. Y., Off, J. & Scholz, F. High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition. Phys. Rev. B 60, 4715-4722 (1999).
    • (1999) Phys. Rev. B , vol.60 , pp. 4715-4722
    • Binet, F.1    Duboz, J.Y.2    Off, J.3    Scholz, F.4
  • 23
    • 2542422532 scopus 로고    scopus 로고
    • Optically-pumped lasing of ZnO at room temperature
    • Bagnall, D. M. et al. Optically-pumped lasing of ZnO at room temperature. Appl. Phys. Lett. 70, 2230-2232 (1997).
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 2230-2232
    • Bagnall, D.M.1
  • 24
    • 0015109299 scopus 로고
    • Refractive index of GaN
    • Edjer, E. Refractive index of GaN. Phys. Status Solidi A. 6, 445-448 (1971).
    • (1971) Phys. Status Solidi A. , vol.6 , pp. 445-448
    • Edjer, E.1
  • 26
    • 0035844436 scopus 로고    scopus 로고
    • Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
    • Jursenas, S. et al. Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN. Appl. Phys. Lett. 78, 3776-3779 (2001).
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 3776-3779
    • Jursenas, S.1
  • 27
    • 0037162163 scopus 로고    scopus 로고
    • Nonlinear chemical imaging nanomicroscopy: From second and third harmonic generation to multiplex (broad-bandwidth) sum frequency generation near-field scanning optical microscopy
    • Schaller, R. D. et al. Nonlinear chemical imaging nanomicroscopy: From second and third harmonic generation to multiplex (broad-bandwidth) sum frequency generation near-field scanning optical microscopy. J. Phys. Chem. B 106, 5143-5154 (2002).
    • (2002) J. Phys. Chem. B , vol.106 , pp. 5143-5154
    • Schaller, R.D.1
  • 28
    • 0032486186 scopus 로고    scopus 로고
    • High power directional emission from microlasers with chaotic resonators
    • Gmachl, C. et al. High power directional emission from microlasers with chaotic resonators. Science 280, 1556-1564 (1998).
    • (1998) Science , vol.280 , pp. 1556-1564
    • Gmachl, C.1
  • 29
    • 0042135571 scopus 로고    scopus 로고
    • Ch. 9 (eds Campillo, A. J. & Chang, R.) (World Scientific, Singapore)
    • Slusher, R. E. & Mohideen, U. In Optical Processes in Microcavities Ch. 9 (eds Campillo, A. J. & Chang, R.) 315-338 (World Scientific, Singapore, 1996).
    • (1996) Optical Processes in Microcavities , pp. 315-338
    • Slusher, R.E.1    Mohideen, U.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.