Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Nanotechnology

Volumn 19, Issue 30, 2008, Pages

  Svensson, C Patrik T ^a   Mårtensson, Thomas ^a,b   Trägårdh, Johanna ^b   Larsson, Christina ^a   Rask, Michael ^c   Hessman, Dan ^b   Samuelson, Lars ^b   Ohlsson, Jonas ^a  

^a Qunano AB   (Sweden)

^b LUND UNIVERSITY   (Sweden)

^c Svedice AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM ALLOYS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LITHOGRAPHY; LUMINESCENCE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OPTICAL COMMUNICATION; OPTICAL DESIGN; PHOTONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STANDARDS; TELECOMMUNICATION;

CORE SHELLS; EPITAXIALLY GROWN; NANOWIRE LIGHT-EMITTING DIODES (NANOLED); ON CHIP OPTICAL COMMUNICATION; SI(2 1 1) SUBSTRATES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE (TRPL); VERTICAL LIGHT EMITTING DIODES (VLED);

SUBSTRATES;

GALLIUM ARSENIDE; INDIUM GALLIUM PHOSPHIDE; NANOWIRE; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; ELECTRON; LIGHT EMITTING DIODE; PHOTOLUMINESCENCE; PRIORITY JOURNAL; TEMPERATURE DEPENDENCE;

EID: 47249112911     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/30/305201     Document Type: Article

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