Diameter-dependent growth direction of epitaxial silicon nanowires

Nano Letters

Volumn 5, Issue 5, 2005, Pages 931-935

  Schmidt, Volker ^a   Senz, Stephan ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; EPITAXIAL GROWTH; INTERFACIAL ENERGY; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; THERMODYNAMICS;

EDGE TENSION; ELECTRONIC DEVICES; INTERFACIAL THICKNESS; SILICON NANOWIRES;

SILICON;

NANOTUBE; SILICON;

ANISOTROPY; ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPARATIVE STUDY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; EVALUATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

ANISOTROPY; COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC WIRING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON;

EID: 19944379818     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050462g     Document Type: Article

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