Growth of epitaxial nanowires at the junctions of nanowalls

Science

Volumn 300, Issue 5623, 2003, Pages 1249-

  Ng, Hou T ^a   Li, Jun ^a   Smith, Michael K ^a   Nguyen, Pho ^a,b   Cassell, Alan ^a   Han, Jie ^a   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

^b SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GOLD; NANOPARTICLE; ZINC OXIDE;

NANOTECHNOLOGY;

ATOMIC FORCE MICROSCOPY; CATALYST; CRYSTAL STRUCTURE; DEVICE; ELECTRIC CONDUCTIVITY; ELECTRONICS; ENERGY; FILM; PRECIPITATION; PRIORITY JOURNAL; SEMICONDUCTOR; SHORT SURVEY; STRUCTURE ANALYSIS; THERMODYNAMICS;

EID: 0038475885     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1082542     Document Type: Short Survey

References (5)

1. International Technology Roadmap for Semiconductors 2001 (Semiconductor Industry Association, San Jose, CA, 2001); available at http://public.itrs.net/Files/20011trs/Home.htm
2. H. T. Ng et al., Appl. Phys. Lett. 82, 2023 (2003).
3. Materials and methods are available as supporting material on Science Online.
4. M. Huang et al., Science 292, 1897 (2001).
5. Y. Wu, P. Qiao, T. Chong, Z. Shen, Adv. Mater. 14, 64 (2002).