-
2
-
-
2542429019
-
Ultra-high speed modulation-doped field-effect transistor. A tutorial review
-
Nguyen, L. D., Larson, L. E. and Mishra, U. K. Ultra-high speed modulation-doped field-effect transistor. A tutorial review. Proc. IEEE80, 494-518 (1992).
-
(1992)
Proc. IEEE
, vol.80
, pp. 494-518
-
-
Nguyen, L.D.1
Larson, L.E.2
Mishra, U.K.3
-
3
-
-
0033884968
-
Manufacturable GaAs VFET for power switching applications
-
Eisenbeiser, K., Huang, J.-H., Salih, A., Hadizad, P. and Pitts, B. Manufacturable GaAs VFET for power switching applications. IEEEElec. Dev. Lett. 21, 144-145 (2000).
-
(2000)
Ieeeelec. Dev. Lett
, vol.21
, pp. 144-145
-
-
Eisenbeiser, K.1
Huang, J.-H.2
Salih, A.3
Hadizad, P.4
Pitts, B.5
-
4
-
-
0028767102
-
InP on Si(111): Accomodation of lattice mismatch and structural properties
-
Krost, A., Heinrichsdorf, F. and Bimberg, D. InP on Si(111): Accomodation of lattice mismatch and structural properties. Appl. Phys. Lett. 64, 769-771 (1994).
-
(1994)
Appl. Phys. Lett
, vol.64
, pp. 769-771
-
-
Krost, A.1
Heinrichsdorf, F.2
Bimberg, D.3
-
5
-
-
0000640786
-
Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
-
Carlin, J. A., Ringel, S. A., Fitzgerald, E. A., Bulsara, M. and Keyes, B. M. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates. Appl. Phys. Lett. 76, 1884-1886 (2000).
-
(2000)
Appl. Phys. Lett
, vol.76
, pp. 1884-1886
-
-
Carlin, J.A.1
Ringel, S.A.2
Fitzgerald, E.A.3
Bulsara, M.4
Keyes, B.M.5
-
6
-
-
0025402410
-
Monolithic integration for co-integration of GaAs MESFET and silicon CMOS devices and circuits. Trans
-
Shichijo, H., Matyi, R., Taddiken, A. H. and Kao, Y. C. Monolithic integration for co-integration of GaAs MESFET and silicon CMOS devices and circuits. Trans. IEEE Elec. Dev. 37, 548-555 (1990).
-
(1990)
IEEE Elec. Dev
, vol.37
, pp. 548-555
-
-
Shichijo, H.1
Matyi, R.2
Taddiken, A.H.3
Kao, Y.C.4
-
7
-
-
33751122778
-
Vapor-liquid-solid mechanism of single crystal growth
-
Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89-90 (1964).
-
(1964)
Appl. Phys. Lett
, vol.4
, pp. 89-90
-
-
Wagner, R.S.1
Ellis, W.C.2
-
8
-
-
79955991177
-
One-dimensional heterostructures in semiconductor nanowhiskers
-
Bjork, M. T. et al. One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 80, 1058-1060 (2002).
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 1058-1060
-
-
Bjork, M.T.1
-
9
-
-
0002614758
-
Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires
-
Wu, Y., Fan, R. and Yang, P. Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires. Nano Lett. 2, 83-86 (2002).
-
(2002)
Nano Lett
, vol.2
, pp. 83-86
-
-
Wu, Y.1
Fan, R.2
Yang, P.3
-
10
-
-
0037811524
-
Equilibrium analysis of lattice-mismatched nanowire heterostructures
-
Ertekin, E., Greaney, P. A., Sands, T. D. and Chrzan, D. C. Equilibrium analysis of lattice-mismatched nanowire heterostructures. Mater. Res. Soc. Symp. Proc. 737, F10.4.1-6 (2003).
-
(2003)
Mater. Res. Soc. Symp. Proc. 737, F10
, vol.4
, pp. 1-6
-
-
Ertekin, E.1
Greaney, P.A.2
Sands, T.D.3
Chrzan, D.C.4
-
11
-
-
0942279109
-
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
-
Zervos, M. and Feiner, L. F. Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires. J. Appl. Phys. 95, 281-291 (2004).
-
(2004)
J. Appl. Phys
, vol.95
, pp. 281-291
-
-
Zervos, M.1
Feiner, L.F.2
-
12
-
-
1642624620
-
Periodic instability in whisker growth
-
Givargizov, E. I. Periodic instability in whisker growth. J. Cryst. Growth 20, 217-226 (1973).
-
(1973)
J. Cryst. Growth
, vol.20
, pp. 217-226
-
-
Givargizov, E.I.1
-
13
-
-
0010911965
-
Fundamental aspects of VLS growth
-
Givargizov, E. I. Fundamental aspects of VLS growth. J. Cryst. Growth 31, 20-30 (1975).
-
(1975)
J. Cryst. Growth
, vol.31
, pp. 20-30
-
-
Givargizov, E.I.1
-
14
-
-
33344462077
-
Growth and optical properties of nanometer-scale GaAs and InAs whiskers
-
Hiruma, K. et al. Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447-462 (1995).
-
(1995)
J. Appl. Phys
, vol.77
, pp. 447-462
-
-
Hiruma, K.1
-
15
-
-
1642487736
-
Growth and structure of chemically vapor deposited Ge nanowires on Si substrates
-
Kamins, T. I., Li, X., Williams, R. S. and Liu, X. Growth and structure of chemically vapor deposited Ge nanowires on Si substrates. Nano Lett. 4, 503-506 (2004).
-
(2004)
Nano Lett
, vol.4
, pp. 503-506
-
-
Kamins, T.I.1
Li, X.2
Williams, R.S.3
Liu, X.4
-
16
-
-
0043143147
-
Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices
-
Zhong, Z., Qian, F., Wang, D. and Lieber, C. M. Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices. Nano Lett. 3, 343-346 (2003).
-
(2003)
Nano Lett
, vol.3
, pp. 343-346
-
-
Zhong, Z.1
Qian, F.2
Wang, D.3
Lieber, C.M.4
-
17
-
-
0035827304
-
Room-temperature ultraviolet nanowire nanolasers
-
Huang, M. H. et al. Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897-1899 (2001).
-
(2001)
Science
, vol.292
, pp. 1897-1899
-
-
Huang, M.H.1
-
19
-
-
0008010681
-
Handbook of Chemistry and Physics (CRC
-
Lide, D. R. (ed.) Handbook of Chemistry and Physics (CRC, Boca Raton, 1995).
-
(1995)
Boca Raton
-
-
Lide, D.R.1
-
20
-
-
3242883707
-
Defect self-annihilation in surfactant-mediated epitaxial growth
-
Horn-von Hoegen, M., LeGoues, F. K., Copel, M., Reuter, M. C. and Tromp, R. M. Defect self-annihilation in surfactant-mediated epitaxial growth. Phys. Rev. Lett. 67, 1130-1133 (1991).
-
(1991)
Phys. Rev. Lett
, vol.67
, pp. 1130-1133
-
-
Horn-Von Hoegen, M.1
Legoues, F.K.2
Copel, M.3
Reuter, M.C.4
Tromp, R.M.5
-
21
-
-
0036508039
-
Beyond the conventional transistor
-
Wong, H. S. P. Beyond the conventional transistor. IBM J. Res. Dev. 46, 133-167 (2002).
-
(2002)
IBM J. Res. Dev
, vol.46
, pp. 133-167
-
-
Wong, H.S.P.1
-
22
-
-
36549091916
-
An effective dipole theory for band lineups in semiconductor heterojunctions
-
Ruan, Y. C. and Ching, W. Y. An effective dipole theory for band lineups in semiconductor heterojunctions. J. Appl. Phys. 62, 2885-2897 (1987).
-
(1987)
J. Appl. Phys
, vol.62
, pp. 2885-2897
-
-
Ruan, Y.C.1
Ching, W.Y.2
-
23
-
-
0005230240
-
Amphoteric behavior and precipitation of Ge dopants in InP
-
Yu, K. M., Moll, A. J. and Walukiewicz, W. Amphoteric behavior and precipitation of Ge dopants in InP. J. Appl. Phys. 80, 4907-4915 (1996).
-
(1996)
J. Appl. Phys
, vol.80
, pp. 4907-4915
-
-
Yu, K.M.1
Moll, A.J.2
Walukiewicz, W.3
-
24
-
-
0005135525
-
Structural and electrical characteristics of Ge and Se implanted InP after thermal annealing
-
Krinhoj, P., Hansen, J. L. and Shiryaev, S. Y. Structural and electrical characteristics of Ge and Se implanted InP after thermal annealing. J. Appl. Phys. 72, 2249-2255 (1992).
-
(1992)
J. Appl. Phys
, vol.72
, pp. 2249-2255
-
-
Krinhoj, P.1
Hansen, J.L.2
Shiryaev, S.Y.3
-
25
-
-
0000229168
-
Growth of strain-relaxed Ge films on Si(001) surfaces
-
Sakai, A., Tatsumi, T. and Aoyama, K. Growth of strain-relaxed Ge films on Si(001) surfaces. Appl. Phys. Lett. 71, 3510-3512 (1997).
-
(1997)
Appl. Phys. Lett
, vol.71
, pp. 3510-3512
-
-
Sakai, A.1
Tatsumi, T.2
Aoyama, K.3
-
26
-
-
0033887818
-
General synthesis of compound semiconductor nanowires
-
Duan, X. and Lieber, C. M. General synthesis of compound semiconductor nanowires. Adv. Mater. 12, 298-302 (2000).
-
(2000)
Adv. Mater
, vol.12
, pp. 298-302
-
-
Duan, X.1
Lieber, C.M.2
|