SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 19, Issue 12, 2008, Pages

Vertically standing Ge nanowires on GaAs(110) substrates

(9) Song, Man Suk a Jung, Jae Hun a Kim, Yong a Wang, Y b Zou, J b Joyce, H J c Gao, Q c Tan, H H c Jagadish, C c

a Dong A University (South Korea)

b UNIVERSITY OF QUEENSLAND (Australia)

c AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GROWTH TEMPERATURE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; SURFACE CHEMISTRY;

CONVENTIONAL SURFACES; EPITAXIAL NANOWIRES; NANOBRIDGE DEVICES; TEMPERATURE RANGE;

NANOWIRES;

GALLIUM ARSENIDE; GERMANIUM; NANOWIRE; SILICON;

ARTICLE; CRYSTALLIZATION; DEVICE; GROWTH; NANOTECHNOLOGY; OXIDATION; PRIORITY JOURNAL; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 42549155307 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/19/12/125602 Document Type: Article

Times cited : (24)

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