Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal-organic chemical vapor deposition

Nano Letters

Volumn 8, Issue 11, 2008, Pages 3755-3760

  Bao, Xin Yu ^a   Soci, Cesare ^a   Susac, Darija ^c   Bratvold, Jon ^c   Aplin, David P R ^a   Wei, Wei ^b   Chen, Ching Yang ^a   Dayeh, Shadi A ^a   Kavanagh, Karen L ^c   Wang, Deli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; GAAS; GROWTH AXIS; HETERO-EPITAXIAL GROWTHS; LOW TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METAL-ORGANIC PRECURSORS; MOLAR FRACTIONS; NANOWIRE GROWTHS; SI(111) SUBSTRATES; SINGLE NANOWIRES; SUBSTRATE PRETREATMENT; SURFACE STATE; SYSTEMATIC EXPERIMENTS; V/III RATIOS; VAPOR-LIQUID-SOLID GROWTH MECHANISMS; ZINC BLENDES;

CRYSTAL STRUCTURE; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GROWTH TEMPERATURE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NANOWIRES; ORGANIC CHEMICALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STACKING FAULTS; SUBSTRATES; TRANSPORT PROPERTIES; VAPORS; ZINC;

EPITAXIAL GROWTH;

EID: 56849112634     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802062y     Document Type: Article

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