A systematic study on the growth of GaAs nanowires by metal-organic chemical vapor deposition

Nano Letters

Volumn 8, Issue 12, 2008, Pages 4275-4282

  Soci, Cesare ^a   Bao, Xin Yu ^a   Aplin, David P R ^a   Wang, Deli ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM DIFFUSIONS; AU NANOPARTICLES; FIRST PRINCIPLES; GAAS; GIBBS-THOMPSON EFFECTS; GOLD NANOPARTICLES; GROWTH MECHANISMS; GROWTH PARAMETERS; GROWTH REGIMES; GROWTH TIME; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOLAR FLOWS; MOLAR RATIOS; NANO PARTICLE SIZES; RATE DEPENDENCES; SYSTEMATIC STUDIES; THERMALLY ACTIVATED; TRANSPORT MECHANISMS; TRIMETHYL GALLIUMS; V/III MOLAR RATIOS; V/III RATIOS;

CATALYSIS; CATALYSTS; DIFFUSION IN SOLIDS; ELECTRIC WIRE; GALLIUM ALLOYS; GOLD; GOLD DEPOSITS; GROWTH RATE; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOPARTICLES; NANOWIRES; ORGANIC CHEMICALS; SEMICONDUCTING GALLIUM; SUPERSATURATION; SURFACE DIFFUSION; VAPORS;

EPITAXIAL GROWTH;

EID: 61649111140     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801986r     Document Type: Article

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