Vertical high-mobility wrap-gated InAs nanowire transistor

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 323-325

  Bryllert, Tomas ^a,b   Wernersson, Lars Erik ^a,c   Fröberg, Linus E ^a   Samuelson, Lars ^a,c  

^a LUND UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c QuNano AB   (Sweden)

Author keywords

Field effect transistor (FET); InAs; Nanowires; Wrap gate

Indexed keywords

EPITAXIAL GROWTH; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING INDIUM COMPOUNDS;

CURRENT SATURATION; NANOWIRES; SELECTIVE EPITAXY;

FIELD EFFECT TRANSISTORS;

EID: 33646254853     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873371     Document Type: Article

References (10)

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