Reliability challenges for advanced copper interconnects: Electromigration and Time-Dependent Dielectric Breakdown (TDDB)

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2009, Pages 677-684

  Gambino, Jeffrey P ^a   Lee, Tom C ^a   Chen, Fen ^a   Sullivan, Timothy D ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER INTERCONNECTS; CU INTERCONNECT; CU-INTERCONNECTS; LOW-K MATERIALS; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTROMIGRATION; INTEGRATED CIRCUITS; MECHANICAL PROPERTIES; OPTICAL INTERCONNECTS; QUALITY ASSURANCE; SAFETY FACTOR;

FAILURE ANALYSIS;

EID: 71049144433     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2009.5232553     Document Type: Conference Paper

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