Underlying physics of the thermochemical e model in describing low-field time-dependent dielectric breakdown in SiO2 thin films

Journal of Applied Physics

Volumn 84, Issue 3, 1998, Pages 1513-1523

  McPherson, J W ^a   Mogul, H C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011076409     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368217     Document Type: Article

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