Cu alloy metallization for self-forming barrier process

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 161-163

  Koike, J ^a   Haneda, M ^a   Iijima, J ^b   Wada, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYER; BARRIER PROCESSES; CU ALLOY; DIFFUSION BARRIER LAYER; ELECTRICAL CHARACTERISTICS; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; METALLIZATION; SELECTION CRITERION;

ALLOYING ELEMENTS; ALLOYS; COPPER; INTEGRATION; MANGANESE; MANGANESE COMPOUNDS; METALLIZING; METALS; TECHNOLOGY;

COPPER ALLOYS;

EID: 50249146387     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648676     Document Type: Conference Paper

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