Effects of microstructure on the formation, shape, and motion of voids during electromigration in passivated copper interconnects

Journal of Materials Research

Volumn 23, Issue 2, 2008, Pages 383-391

  Choi, Z S ^a   Monig R ^a,b   Thompson, C V ^a  

^a Massachusetts Institute of Technology   (United States)

^b KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTALLOGRAPHY; GRAIN BOUNDARIES; MICROSTRUCTURE; OPTICAL INTERCONNECTS; SCANNING ELECTRON MICROSCOPY;

PASSIVATED COPPER INTERCONNETS; POSTMORTEM ELECTRON BACKSCATTERED DIFFRACTION;

ELECTROMIGRATION;

EID: 39749202166     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2008.0054     Document Type: Article

References (29)

1. M.A. Korhonen, P. Borgesen, K.N. Tu, and C.Y. Li: Stress evolution due to electromigration in confined metal lines. J. Appl. Phys. 73, 3790 (1993).
2. R.W. Thomas and D.W. Calabresse: Phenomenological observations on electromigration, in Proceedings of the 21st international Reliability Physics Symposium (IEEE, New York, 1983), p. 1.
3. E.N. Levine and J. Kitcher: Electromigration induced damage and structure change in Cr-Al/Cu and Al/Cu interconnection lines, in Proceedings of the 22nd International Reliability Physics Symposium (IEEE, New York, 1984), p. 242.
4. P.R. Besser, M.C. Madden, and P.A. Flinn: In situ scanning electron microscopy observation of the dynamic behavior of electromigration voids in passivated aluminum lines. J. Appl. Phys. 72, 3792 (1992).
5. E. Arzt, O. Kraft, W.D. Nix, and J.E. Sanchez, Jr.: Electromigration failure by shape change of voids in bamboo lines. J. Appl. Phys. 76, 1563 (1994).
6. C.K. Hu, K.Y. Lee, L. Gignac, and R. Carruthers: Electromigration in 0.25 μm wide Cu line on W. Thin Solid Films 308-309, 443 (1997).
7. L. Arnaud, G. Tartavel, T. Berger, D. Mariolle, Y. Gobil, and I. Touet, Microstructure and electromigration in copper damascene lines, in IEEE 39th Annual International Reliability Physics Symposium (IEEE, New York, 1999), p. 263.
8. M.W. Lane, E.G. Liniger, and J.R. Lloyd: Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93, 1417 (2003).
9. K. Lee, E.T. Ogawa, H. Matsuhashi, P.R. Justison, K. Ko, P.S. Ho, and V.A. Blaschke: Electromigration critical length effect in Cu/oxide dual-damascene interconnects. Appl. Phys. Lett. 79, 3236 (2001).
10. M.A. Meyer, M. Herrmann, E. Langer, and E. Zschece: In situ SEM observation of electromigration phenomena in fully embedded copper interconnect structures. Microelectron. Eng. 64, 375 (2002).
11. E. Zschech, M.A. Meyer, and B. Langer: Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation, in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004, edited by R.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, and S.E. Schulz (Mater. Res. Soc. Symp. Proc. 812, Warrendale, PA, 2004), p. F7.5.
12. Z. Choi, R. Mönig, C.V. Thompson, and M. Burns: Kinetics of void drift in copper interconnects, in Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects, edited by T.Y. Tsui, Y-C. Joo, L. Michaelson, M. Lane, and A.A. Volinsky (Mater. Res. Soc. Symp. Proc. 914, Warrendale, PA, 2006), 0914-F08-03, p. 363.
13. J. Ziegler: http://www.srim.org/
14. C.K. Hu, B. Luther, F.B. Kaufman, J. Hummel, C. Uzoh, and D.J. Pearson: Copper interconnection integration and reliability. Thin Solid Films 262, 84 (1995).
15. S.P. Hau-Riege: Probabilistic immortality of Cu damascene interconnects. J. Appl. Phys. 91, 2014 (2002).
16. C.S. Hau-Riege, A.P. Marathe, and V. Pham: The effect of line length on the electromigration reliability of Cu interconnects, in Advanced Metallization Conference (U.C. Berkeley Extension, San Diego, CA, 2002), p. 169.
17. E.T. Ogawa, K. Lee, V.A. Blaschke, and P.S. Ho: Electromigration reliability issues in dual-damascene Cu interconnections. IEEE Trans. Rel. 51, 403 (2002).
18. M. Hauschildt, M. Gall, S. Thrasher, P. Justison, L. Michaelson, R. Hernandez, and H. Kawasaki: Analysis of electromigration statistics for Cu interconnects. Appl. Phys. Lett. 88, 211907 (2006).
19. M. Karimi, T. Tomkowski, G. Vidali, and O. Biham: Diffusion of Cu on Cu surfaces. Phys. Rev. B: Condens. Matter 52, 5364 (1995).
20. P. Børgesen, M.A. Korhonen, D.D. Brown, and C.Y. Li: Stress induced voiding and electromigration. AIP Conf Proc. 263, 219 (1992).
21. T.V. Zaporozhets, A.M. Gusak, K.N. Tu, and S.G. Mhaisalkar: Three-dimensional simulation of void migration at the interface between thin metallic film and dielectric under electromigration. J. Appl. Phys. 98, 103508 (2005).
22. C.K. Hu and S. Reynolds: CVD Cu interconnections and electromigration. Electrochem. Soc. Symp. Proc. 97-25, 1514 (1997).
23. M.A. Korhonen, P. Borgesen, D.D. Brown, and C.Y. Li: Microstructure based statistical model of electromigration damage in confined line metallizations in the presence of thermally induced stresses. J. Appl. Phys. 74, 4995 (1993).
24. R.J. Gleixner, B.M. Clemens, and W.D. Nix: Void nucleation in passivated interconnect lines: Effects of site geometries, interfaces, and interface flaws. J. Mater. Res. 12, 2081 (1997).
25. Z-S. Choi, R. Mönig, and C.V. Thompson: Dependence of the electromigration flux on the crystallographic orientations of different grains in polycrystalline copper interconnects. Appl. Phys. Lett. 90, 241913 (2007).
26. Z-S. Choi and C.V. Thompson: unpublished research.
27. C.W. Chang, C.V. Thompson, C.L. Gan, K.L. Pey, W.K. Choi, and Y.K. Lim: Effects of microvoids on the linewidth dependence of electromigration failure of dual-damascene copper interconnects. Appl. Phys. Lett. 90, 193505 (2007).
28. J.R. Lloyd: Electromigration failure. J. Appl. Phys. 69, 7601 (1991).
29. R. Kircheim and U. Kaeber: Atomistic and computer modeling of metallization failure of integrated circuits by electromigration. J. Appl. Phys. 70, 172 (1991).