The effect of metal area and line spacing on TDDB characteristics of 45nm low-k SiCOH dielectrics

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 382-389

  Chen, F ^a   McLaughlin, P ^a   Gambino, J ^a   Wu, E ^a   Demarest, J ^a   Meatyard, D ^a   Shinosky, M ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Area scaling; Cu interconnect; ILD; Log normal distribution; Low k; Reliability; Spacing scaling; Spacing variation; Time dependent dielectric breakdown; Weibull distribution

Indexed keywords

ELECTRIC FIELDS; EXTRAPOLATION; FAILURE ANALYSIS; OPTICAL INTERCONNECTS; RELIABILITY ANALYSIS; WEIBULL DISTRIBUTION;

LINE SPACINGS; LOG-NORMAL DISTRIBUTIONS; OPERATING VOLTAGES; ROBUST TECHNOLOGY; SPACING SCALING; SPACING VARIATIONS; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN;

EID: 34548732601     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369920     Document Type: Conference Paper

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