In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures

Applied Physics Letters

Volumn 85, Issue 13, 2004, Pages 2502-2504

  Vairagar, A V ^a   Mhaisalkar, S G ^a   Krishnamoorthy, Ahila ^b   Tu, K N ^c   Gusak, A M ^d,e   Meyer, Moritz Andreas ^d   Zschech, Ehrenfried ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d IBM MICROELECTRONICS   (United States)

^e CHERKASY NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CAP INTERFACE; DUAL-DAMASCENE STRUCTURES; ELECTROMIGRATION STRESSING; ELECTRON FLOW;

AGGLOMERATION; COPPER; CURRENT DENSITY; DIFFUSION; ELECTROPLATING; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; TENSILE STRESS;

ELECTROMIGRATION;

EID: 7544241907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1795978     Document Type: Article

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