Blech effect and lifetime projection for Cu/Low-K interconnects

2008 IEEE International Interconnect Technology Conference, IITC

Volumn , Issue , 2008, Pages 114-116

  Christiansen, Cathryn ^a   Li, Baozhen ^a   Gill, Jason ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS;

CU INTERCONNECTS; FAILURE DISTRIBUTIONS; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; LOGNORMAL;

ELECTROMIGRATION;

EID: 50949098804     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2008.4546941     Document Type: Conference Paper

References (7)

1. I.A. Blech and C. Herring, "Stress generation by electromigration", Appl. Phys. Lett, vol. 29, pp. 131-133, 1976.
2. P.C. Wang and R.G. Filippi, "Electromigration threshold in copper interconnects", Appl. Phys. Lett., vol. 78, pp. 3598-3600, 2001.
3. M. Angyal, et. al., "A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applications", Proc. Adv. Met. Conf., pp. 39-46, 2005.
4. R. D. Goldbatt, et. al., "A high performance 0.13 um Copper BEOL technology with low-k dielectric", Proc. IITC 2000, pp. 261-263.
5. A.S. Oates, "Electromigration failure distribution of contacts and vias as a function of stress conditions in submicron IC metallizations", Proc. IRPS 1996, pp. 164-171.
6. J.J. Clement, "Electromigration modeling for integrated circuit interconnect reliability analysis", Trans. Dev. Mat. Rel., vol. 1, pp. 33-42, 2001.
7. K-D. Lee et. al., "Electromigration threshold for Cu/low k interconnects", Proc IITC 2003, pp. 259-261.