A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects

Advanced Metallization Conference (AMC)

Volumn 2006, Issue , 2006, Pages 351-357

  Gates, S M ^a   Grill, A ^a   Dimitrakopoulos, C ^a   Restaino, D ^b   Lane, M ^a   Patel, V ^a   Cohen, S ^a   Simonyi, E ^a   Liniger, E ^a   Ostrovski, Y ^a   Augur, R ^c   Sherwood, M ^d   Klymko, N ^b   Molis, S ^b   Landers, W ^b   Edelstein, D ^a   Sankaran, S ^b   Wisnieff, R ^a   Ivers, T ^b   Yim, K ^e   Nguyen, V ^e   Nowak, T ^e   Rocha, J C ^e   Reiter, S ^e   Demos, A ^e   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d IBM ALMADEN RESEARCH CENTER   (United States)

^e APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEOL INTERCONNECTS; BLANKET FILMS; BREAKDOWN FIELDS; INTEGRATION PROCESSING;

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC POWER SYSTEM INTERCONNECTION; LEAKAGE CURRENTS; OPTIMIZATION;

DIELECTRIC MATERIALS;

EID: 33947228878     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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