Electromigration-induced extrusion failures in Cu/low-k interconnects

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Wei, Frank L ^a   Gan, Chee Lip ^b   Tan, Tam Lyn ^b   Hau Riege, Christine S ^c   Marathe, Amit P ^c   Vlassak, Joost J ^d   Thompson, Carl V ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c ADVANCED MICRO DEVICES   (United States)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; COPPER ALLOYS; CRACK PROPAGATION; DELAMINATION; DIELECTRIC MATERIALS; ELASTIC MODULI; ELECTROMIGRATION; ESTIMATION; EXTRUSION; FINITE ELEMENT METHOD; FRACTURE FIXATION; FRACTURE TOUGHNESS; HIGH ENERGY FORMING; INTERDIFFUSION (SOLIDS); METALLIZING; NITRIDES; NONMETALS; SILICON; TANTALUM;

CAPPING LAYER; CRACK GEOMETRIES; CRITICAL STRESSES; EXTRUSION FAILURES; EXTRUSION PROCESSING; FINITE ELEMENTS; INTER-LEVEL DIELECTRIC; INTERCONNECT LINES; INTERCONNECT STRUCTURES; INTERCONNECT SYSTEMS; METHOD ANALYSIS; MODE-MIXITY; PLANE STRAINS; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; UNDERLAYER; VOID GROWTH;

FORMING;

EID: 48849109136     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957057     Document Type: Article

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