Reliability analysis method for low- k interconnect dielectrics breakdown in integrated circuits

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Haase, Gaddi S ^a   Ogawa, Ennis T ^a   McPherson, Joe W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; INTEGRATED CIRCUIT TECHNOLOGY; ORGANOSILICATE MATERIALS; RELIABILITY ANALYSIS METHOD;

ACTIVATION ENERGY; ELECTRIC POWER SYSTEM INTERCONNECTION; ELECTRON MICROSCOPY; INTEGRATED CIRCUITS; ORGANOMETALLICS; PERMITTIVITY; RELIABILITY; SILICATES; VOLTAGE CONTROL;

DIELECTRIC MATERIALS;

EID: 23944456397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999028     Document Type: Article

References (27)

1. A. Berman, Proceedings of International Reliability Physics Symposium (IEEE, New York, 1981), p. 204.
2. J. W. McPherson and D. A. Baglee, Proceedings of International Reliability Physics Symposium (IEEE, New York, 1985), p. 1.
3. J. W. McPherson and H. C. Mogul, J. Appl. Phys. 84, 1513 (1998).
4. J. W. McPherson, J. Appl. Phys. 95, 8101 (2004).
5. J. W. McPherson, R. Khamankar, and A. Shanware, J. Appl. Phys. 88, 5351 (2000).
6. E. Ogawa, J. Kim, G. Haase, H. Mogul and J. McPherson, Proceedings of International Reliability Physics Symposium (IEEE, New York, 2003), p. 166.
7. M. Shatzkes and M. Av-Ron, IBM J. Res. Dev. 25, 167 (1981).
8. W. Weibull, J. Appl. Mech. 18, 293 (1951).
9. For example, R. Schwab and K. H. Allers, Proceedings of International Integrated Reliability Workshop (IEEE, New York, 2003), p. 86; H. Cui and P. A. Burke, Appl. Phys. Lett. 84, 2629 (2004).
10. For example, R. Schwab and K. H. Allers, Proceedings of International Integrated Reliability Workshop (IEEE, New York, 2003), p. 86; H. Cui and P. A. Burke, Appl. Phys. Lett. 84, 2629 (2004).
11. D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys. 73, 3367 (1993) and references within.
12. G. Bersuker, Y. Jeon, G. Gale, J. Guan, and H. R. Huff, Proceedings of International Integrated Reliability Workshop (IEEE, New York, 2000), p. 107.
13. J. Suehle, P. Chaparala, C. Messick, W. Miller, and K. Boyko, Proceedings of International Reliability Physics Symposium (IEEE, New York, 1994), p. 120.
14. T. Y. Tsui, R. Willecke, and A. J. McKerrow, Proceedings of International Interconnect Technology Conference (IEEE, New York, 2003), p. 45.
15. T. Y. Tsui, P. Matz, R. Willecke, Proceedings of International Interconnect Technology Conference (IEEE, New York, 2004), p. 78.
16. F. A. Cotton and G. Wilkinson, Advanced Inorganic Chemistry, 3rd ed. (Wiley, New York, 1972), p. 310.
17. K. F. Schuegraf and C. Hu, Proceedings of International Reliability Physics Symposium (IEEE, New York, 1993), p. 7.
18. D. J. DiMaria and J. W. Stasiak, J. Appl. Phys. 65, 2342 (1989).
19. P. E. Blöchl, Phys. Rev. B 62, 6158 (2000).
20. D. J. DiMaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995).
21. F. Irrera, Appl. Phys. Lett. 79, 182 (2001).
22. R. Ludeke, IBM J. Res. Dev. 44, 517 (2000).
23. S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Dong, J. Appl. Phys. 0021-8979 10.1063/1.336098 58, 1302 (1985); J. DiMaria, M. V. Fischetti, E. Tierney, and D. Brorson, Phys. Rev. Lett. 56, 1284 (1986).
24. S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Dong, J. Appl. Phys. 0021-8979 10.1063/1.336098 58, 1302 (1985); J. DiMaria, M. V. Fischetti, E. Tierney, and D. Brorson, Phys. Rev. Lett. 56, 1284 (1986).
25. D. J. DiMaria, M. V. Fischetti, M. Arienzo, and E. Tierney, J. Appl. Phys. 60, 1719 (1986).
26. E. K. Chang, M. Rohlfing, and S. G. Louie, Phys. Rev. Lett. 85, 2613 (2000).
27. A. H. Edwards, W. B. Fowler, and J. Robertson, in Structure and Imperfection in Amorphous and Crystalline Silicon Oxide, edited by, R. A. B. Devinem, A. B. Roderick, E. Doorhee, and, J. P. Duraud, (Wiley, New York, 2000), p. 254.