Impact of Cu microstructure on electromigration reliability

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 93-95

  Hu, C K ^a   Gignac, L ^a   Baker, B ^a   Liniger, E ^a   Yu, R ^a   Flaitz, P ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL MECHANICAL POLISHING; ELECTROMIGRATION; ELECTROPLATING; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; SILICON WAFERS;

POLYCRYSTALLINE MIXTURE; VOID GROWTH; WAFER ANNEALING;

COPPER ALLOYS;

EID: 34748836562     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382357     Document Type: Conference Paper

References (7)

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6. A.K. Stamper et al, Proc. Advanced Metallization Conf. (2005) p.727
7. T. Surholt and Chr. Herzig, Acta Mater. 45, 3817 (1997)