Cu-Ion-migration phenomena and its influence on TDDB lifetime in Cu metallization

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 287-292

  Noguchi, Junji ^a   Miura, Noriko ^a   Kubo, Maki ^a   Tamaru, Tsuyoshi ^a   Yamaguchi, Hizuru ^a   Hamada, Naohide ^a   Makabe, Kazuya ^a   Tsuneda, Ruriko ^a   Takeda, Ken Ichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; HEAVY IONS; INTEGRATED CIRCUIT INTERCONNECTS; RELIABILITY;

BARRIER DIELECTRICS; CU METALLIZATION; CU-INTERCONNECTS; CU-ION MIGRATION; FINE-LINE EFFECTS; LOW K DIELECTRICS; TDDB LIFETIME; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84955264617     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197759     Document Type: Conference Paper

References (7)

1. J. Noguchi, N. Ohashi, J. Yasuda, T. Jimbo, H. Yamaguchi, N. Owada, K. Takeda, and K. Hinode, "TDDB Improvement in Cu Metallization under Bias Stress", Proceedings of IRPS 2000, pp.339-343 (2000).
2. 3-plasma Treatment and CMP Modification TDDB Improvement in Cu Metallization", Electron Device, Vol. 48, No. 7, pp1340-1345 (2001).
3. J. Noguchi, T. Saito, N. Ohashi, H. Ashihara, H. Maruyama, M. Kubo, H. Yamaguchi, D. Ryuzaki, K. Takeda, and K. Hinode, "Impact of Low-K Dielectrics and Barrier Metals on TDDB Lifetime of Cu Interconnects", Proceedings of IRPS 2001, pp.355-359 (2001).
4. N. Miura, J. Noguchi, K. Oomori, T. Jimbo, H. Aoki, and T. Tamaru, "An Effective Technology Using SiCN/FSC - Structures for Dual Damascene Cu Process", Proceedings of VMC 2001, pp143-145 (2001).
5. K. Takeda, D. Ryuzaki, T. Mine and K. Hinode, "New Dielectric Barrier for Damascene Cu Interconnection: Trimethylsilane-based SiO2 Film with k=3.9", Proceedings of IITC 2001, pp.244-246 (2001).
6. R. Tsuneta, M. Koguchi, K. Nakamura and A. Nishida, "A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low-dose elements in fine semi-conductor devices", J. of Electron Microsc. 51(3), pp. 167-171 (2002).
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