A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 46-53

  Chen, F ^a   Bravo, O ^a   Chanda, K ^a   McLaughlin, P ^a   Sullivan, T ^a   Gill, J ^a   Lloyd, J ^b   Kontra, R ^a   Aitken, J ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Cu interconnect; Electrochemical reaction; ILD; Low k; Metal diffusion; Process integration; Reliability; Time dependent dielectric breakdown

Indexed keywords

METAL DIFFUSION; PROCESS INTEGRATION; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC DEVICES; DIFFUSION; ELECTROCHEMISTRY; PROCESS ENGINEERING; PRODUCT DEVELOPMENT; RELIABILITY THEORY; THERMAL EFFECTS;

ELECTRIC BREAKDOWN;

EID: 34250652290     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251190     Document Type: Conference Paper

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