Integration of copper with low-k dielectrics for 0.13 μm technology

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn 2002-January, Issue , 2002, Pages 111-117

  Gambino, J ^a   Stamper, A ^a   McDevitt, T ^a   McGahay, V ^a   Luce, S ^a   Pricer, T ^a   Porth, B ^a   Senowitz, C ^a   Kontra, R ^a   Gibson, M ^a   Wildman, H ^a   Piper, A ^a   Benson, C ^a   Standaert, T ^a   Biolsi, P ^a   Cooney, E ^a   Webster, E ^a   Wistrom, R ^a   Winslow, A ^a   White, E ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Chemical technology; Copper; Dielectric constant; Glass; Integrated circuit interconnections; Microelectronics; Packaging; Plasma temperature; Polarization; Polymer films

Indexed keywords

COPPER; DIELECTRIC MATERIALS; GLASS; INTEGRATED CIRCUIT INTERCONNECTS; INTEGRATED CIRCUITS; MICROELECTRONICS; PACKAGING; PERMITTIVITY; POLARIZATION; POLYMER FILMS; POLYMERS;

CHEMICAL TECHNOLOGIES; CU SURFACES; FLUOROSILICATE GLASS; INTEGRATED CIRCUIT INTERCONNECTIONS; LOW K DIELECTRICS; ORGANOSILICATE GLASS; PLASMA TEMPERATURE; PROCESS ISSUES;

FAILURE ANALYSIS;

EID: 84927923035     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2002.1025628     Document Type: Conference Paper

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