A highly reliable Cu interconnect technology for memory device

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 64-66

  Lee, H B ^a   Hong, J W ^a   Seong, G J ^a   Lee, J M ^a   Park, H ^a   Baek, J M ^a   Choi, K I ^a   Park, B L ^a   Bae, J Y ^a   Choi, G H ^a   Kim, S T ^a   Chung, U I ^a   Moon, J T ^a   Oh, J H ^a   Son, J H ^a   Jung, J H ^a   Hah, S ^a   Lee, S Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DATA STORAGE EQUIPMENT; ELECTROPLATING; METALLIZING; PHYSICAL VAPOR DEPOSITION;

IPVD BARRIER; PROCESS INTEGRATION; TRENCH PATTERN;

OPTICAL INTERCONNECTS;

EID: 34748815818     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382350     Document Type: Conference Paper

References (5)

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2. D.Ernur, et al., Journal of Electrochemical Society, 151(12), pp. B636 -B643, 2004.
3. W. Zhang, et al., Journal of Electrochemical Society, 152(12), pp. C832-C837, 2005.
4. Kapur, et al., Electron Devices, IEEE Transactions on., 49(4), pp. 590-597, 2002.
5. W. Zhang, et al, Microelectronics Engineering, 76, pp. 146-152, 2004.