Low and Ultralow Dielectric Constant Films Prepared by Plasma-enhanced Chemical Vapor Deposition

Dielectric Films for Advanced Microelectronics

Volumn , Issue , 2007, Pages 1-32

  Grill, A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Characterization techniques and low k dielectrics; Coefficient of thermal expansion (CTE); Dielectric films in advanced microelectronics; Integration of DLC with copper metallization; Low and ultralow dielectric constant films prepared; PECVD SiCOH films; Porosity in pSiCOH; Spin on glasses (SOG)

Indexed keywords

FILM PREPARATION; LOW-K DIELECTRIC; MICROELECTRONICS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THERMAL EXPANSION;

CHARACTERIZATION TECHNIQUES; COPPER METALLIZATION; SICOH FILMS; SPIN-ON GLASS; ULTRA-LOW DIELECTRIC CONSTANT;

DIELECTRIC MATERIALS;

EID: 84887226882     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9780470017944.ch1     Document Type: Chapter

References (68)

1. D. Edelstein, J. Heidenreich, R. Goldblatt, W. Cote, C. Uzoh, N. Lustig, P. Roper, T. McDevitt, A. Stamper, W. Motsiff, A. Simon, J. Dukovic, R. Wachnik, P. McLaughlin, T. Katsetos, H. Rathore, R. Schulz, L. Su, S. Luce, N. Rohrer, and J. Slattery, Tech. Dig. IEEE IEDM, 376 (1997).
2. S. Venkatesan et al. Tech. Dig. IEEE IEDM, 769 (1997).
3. International Technology Roadmap for Semiconductors, 2003 Edition, International SEMATECH, 2706 Montopolis Drive Austin, TX 78741, USA.
4. The National Technology Roadmap for Semiconductors, San Jose, SIA, 1997.
5. C. Case, Solid State Technol., 26, January (2005).
6. Mat. Res. Soc. Symp. Proc., 381 (1995)
7. The Electrochemical Soc. Proc. Series, PV97-8 (1997), PV98-3 (1998), PV99-7 (1999).
8. M. McCoy, 2000 C&EN, 17, (2000).
9. L. Peters, Semiconductor International, 23(6), 108 (2000).
10. A. Grill, Cold Plasma in Materials Fabrication: From Fundamentals to Applications, Wiley-IEEE Press, Hoboken, NJ, 2001.
11. A. Grill, V. Patel, and C. Jahnes, J. Electrochemical Soc., 145, 1649 (1998).
12. A. Grill, C. Jahnes, J. Ott, V. Patel, and S. Cohen, J. Hummel, R. Mih, and J. Liu, Electrochemical Society Proceedings, PV 98-3, 118 (1998).
13. Computer Graphics Services, CGS, Ithaca, NY.
14. n&k Analyzer 1280 from n&k Technology, Inc. 4051 Burton Drive, Santa Clara, California, 95054.
15. A. Grill and D.A. Neumayer, J. Appl. Phys., 94, 6697 (2003).
16. A. Grill, V. Patel, and S. Cohen, Diamond and Related Materials, 3, 281 (1994).
17. A. Grill and B.S. Meyerson, Ch.5 in Synthetic Diamond: Emerging CVD Science and Technology, K.E. Spear and J.P. Dismukes (eds), John Wiley & Sons, Inc., New York, 1994.
18. A. Grill, D. Edelstein, D. Restaino, M. Lane, S. Gates, E. Liniger, T. Shaw, X-H. Liu, D. Klaus, V. Patel, S. Cohen, E. Simonyi, N. Klymko, S. Lane, K. Ida, S. Vogt T. Van Kleeck, C. Davis, M. Ono, T. Nogami, and T. Ivers, Proc. IEEE 2004 Internat. Interconnect Technol. Conference, IEEE, Piscataway, NJ (IEEE Catalog No. 04TH8729) 54 (2004).
19. R.F. Cook and E.G. Liniger, Mat. Res. Soc. Symp. Proc., 511, 171 (1998).
20. C. Donnet, J. Fontaine, A. Grill, V. Patel, C. Jahnes, and M. Belin, Surf. Coat. Technol., 94-95, 531 (1997).
21. A. Grill, V. Patel, K.P. Rodbell, and E. Huang, M.R. Baklanov and K.P. Mogilnikov, M. Toney, and H.-C. Kim, J. Appl. Phys., 94, 3427 (2003).
22. Hae-Jeong Lee, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, Eric K. Lin, Wen-li Wu, and Alfred Grill, J. Appl. Phys., 95, 2355 (2004).
23. C.L. Soles, H.-J. Lee, E.K. Lin, and W.-L. Wu., Special Publication 960-13, NIST, U.S. Government Printing Offi ce, Washington, DC, 2004.
24. A. Grill, Diamond and Related Materials, 8, 428 (1999).
25. A. Grill, V. Patel, S.A. Cohen, D.C. Edelstein, J.R. Paraszczak, and C. Jahnes, Proc. Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, October 1-3, Boston, R. Haveman, J. Schmitz, H. Komiyama and K. Tsubouchi (eds), Materials Research Society, Pittsburg, PA, 417, (1997).
26. A. Grill, V. Patel, K.L. Saenger, C. Jahnes, S.A. Cohen, A.G. Schrott, D.C. Edelstein, and J.R. Paraszczak, Mat. Res. Soc. Symp. Proc., 443, 155 (1997).
27. S. Takeishi, H. Kudo, R. Shinohara, M. Hashino, S. Fukuyama, J. Yamaguchi, and M. Yamada, J. Electrochem. Soc., 144, 1797 (1997).
28. Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi, IEDM, 96, 369 (1996).
29. Y. Matsubara, K. Endo, M. Iguchi, N. Ito, K. Aoyama, T. Tatsumi, and T. Horiuchi, Mat. Res. Soc. Symp. Proc., 511, 291 (1998).
30. H. Kudo, R. Shinohara, and Y. Yamada, Mat. Res. Soc. Proc., 381, 105, (1995).
31. K. Endo and T. Tatsumi, Mat. Res. Soc. Proc., 381, 135, (1995).
32. J.P. Sulivan, T.A. Friedmann, C.A. Apblett, M.P. Siegal, N. Missert, M.L. Lovejoy, P.B. Mirkarimi, and K.F. McCarty, Mat. Res. Soc. Proc. 381, 273, (1995).
33. A. Grill, Diamond and Related Materials, 10(2), 234 (2001).
34. A. Grill, C. Jahnes, V. Patel, J. Ott, J. Hummel, R. Mih, and J. Liu, Mat. Res. Soc. Symp. Proc., 511, 223 (1998).
35. H. Yang, T. Nguyen, Y. Ma, and S.-T. Hsu, 1998 DUMIC Conference, 38 (1998).
36. A. Grill, J.P. Hummel, C.V. Jahnes, V.V. Patel, and K.L. Saenger, US Patent 6140226, Issued 10/31/2000.
37. E.T. Ryan, A.J. McKerrow, J. Leu, and P.S. Ho, MRS Bulletin 22, 49 (1997).
38. N.P. Hacker, G. Davis, L. Figge, T. Krajewski, S. Lefferts, J. Nedbal, and R. Spear, Mat. Res. Soc. Symp. Proc., 476, 25 (1997).
39. M.J. Loboda, C.M. Grove, and R.F. Schneider, J. Electrochem. Soc. 145, 2861 (1998).
40. A. Grill, L. Perraud, V. Patel, C. Jahnes, and S. Cohen, Mat. Res. Soc. Symp. Proc., 565, 107 (1999).
41. Y.Y. Cheng, L.C. Chao, S.M. Jang, C.H. Yu, and M.S. Liang, Proc. IEEE 2000 Internat. Interconnect Technol. Conf., 161 (2000).
42. M. Loboda, J. Seifferly, C. Grove, and R. Schneider, Mat. Res. Soc. Proc. 447, 145 (1997).
43. R.A. Donaton, et al., Mat. Res. Soc. Proc., 612, D5.14.1 (2000).
44. H. Ikakura, et al., Conf. Proc. ULSI VXI, 611 (2001) (MRS, Warrendale, PA).
45. M. Tada, J. Kawahara, and Y. Hayashi, Conf. Proc. ULSI VXI, 579 (2001) (MRS, Warrendale, PA).
46. A. Grill and V. Patel, Electrochemical Soc. Proc., 2000-5, 55 (2000).
47. A. Grill and V. Patel, Mat. Res. Soc. Symp. Proc., 612, D291 (2001).
48. A. Grill and V. Patel, Appl. Phys. Lett., 79(6), 803 (2001).
49. M. O'Neil, A. Lukas, R. Vrtis, J. Vincent, B. Peterson, M. Bitner, and E. Karwacki, Semiconductor International, 26(6), 93 (2002).
50. Q. Wu and K.K. Gleason, Plasma and Polymers, 8, 31 (2003).
51. Newsbytes PM, November 6 (1998)
52. B.K. Hwang, M.J. Loboda, G.A. Cerny, R.F. Schneider, and J.A. Seifferly, Electrochemical Soc. Proc., PV2000-5, 63 (2000).
53. R. Vrtis, M.L. O'Neil, J.L. Vincent, A.S. Lucas, B.K. Peterson, M.D. Bitner, E.J. Karwacki, Mat. Res. Symp. Proc., 766, 259 (2003).
54. K. Fujita, H. Miyajima, R. Nakata, and N. Miyashita, Proceedings of the IEEE 2003 Intern. Interconnect Technol. Conference, (IEEE, Piscataway, NJ) paper 6.4 (2003).
55. C. Waldfried, Advanced Dielectric Materials Seminar, organized by Axcelis, Oct. 17, 2004, San-Diego, CA.
56. A. Grill, J. Appl. Phys., 93, 1785 (2003).
57. A. Grill, D. Edelstein, and V. Patel, Conf. Proc. ULSI, XVII, 253 (2002), (MRS, Warrendale, PA).
58. J.M. Ambrico, E.E. Jones, and M.R. Begley, Int. J. Solids and Structures, 39, 1443 (2002).
59. S. Thompson, et al., 2002 IEDM Technical Digest, 61 (2002) (IEEE Catalog nr. 02CH37358, Piscataway, NJ).
60. M. Matsuura et al., Conf. Proc. ULSI, VXIII, 493 (2003) MRS, Warrendale, PA.
61. R.A. Donaton et al., Conf. Proc. ULSI, VXI, 595 (2001) MRS, Warrendale, PA.
62. P. Wrshka, G. Lee, K.-S. Low, K. Dev, D. Dobuzinsky, R. Conti, and P. Schafer, Conf. Proc. ULSI, VXI, 549 (2001) MRS, Warrendale, PA.
63. D. Edelstein et al., Proceedings of the IEEE 2004 Intern. Interconnect Technol. Conf., IEEE, Piscataway, NJ (IEEE Catalog No. 04TH8729), 214 (2004).
64. H. Ruelke, P. Huebler, C. Streck, M. Gotuaco, and W. Senninger, Solid State Technol., 47(1), 60 (2004).
65. C.-H. Jan et al., Proceedings of the IEEE 2004 Intern. Interconnect Technol. Conf, IEEE, Piscataway, NJ (IEEE Catalog No. 04TH8729), 205 (2004).
66. C.C. Jeng et al., Proceedings of the IEEE 2004 Intern. Interconnect Technol. Conf., IEEE, Piscataway, NJ (IEEE Catalog No. 04TH8729), 199 (2004).
67. V. McGahay et al., Proceedings of the IEEE 2006 Intern. Interconnect Technol. Conf., IEEE, Piscataway, NJ, (IEEE Catalog Number: 06TH8862C) paper 9.
68. S. Sankaran et al., Presented at IEDM 2006.