SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2007, Pages 390-398

Modeling of interconnect dielectric lifetime under stress conditions and new extrapolation methodologies for time-dependent dielectric breakdown

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; MATHEMATICAL MODELS; MICROELECTRONICS; OPTICAL INTERCONNECTS; RELIABILITY ANALYSIS; STRESS ANALYSIS;

INTERCONNECT MODELS; MICROELECTRONICS INTERCONNECT SYSTEMS; STRESS CONDITIONS; TIME-DEPENDENT DIELECTRICS BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN;

EID: 34548731927 PISSN: 00999512 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/RELPHY.2007.369921 Document Type: Conference Paper

Times cited : (42)

References (15)

1
- 84955240546
- Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
- st Annual IEEE International Reliability Physics Symposium, p. 166, 2003.
- (2003) st Annual IEEE International Reliability Physics Symposium , pp. 166
- Ogawa, E.T.¹ Jinyoung, K.² Haase, G.S.³ Mogul, H.C.⁴ McPherson, J.W.⁵

2
- 28744444719
- Role of dielectric and barrier integrity in reliability of sub-100nm copper low-k interconnects
- rd Annual IEEE International Reliability Physics Symposium, p. 495, 2005.
- (2005) rd Annual IEEE International Reliability Physics Symposium , pp. 495
- Tokei, Z.¹ Van Aelst, J.² Waldiried, C.³ Escorcia, O.⁴ Roussel, P.J.⁵ Richard, O.⁶ Travaly, Y.⁷ Beyer, G.P.⁸ Maex, K.⁹

3
- 34250652290
- Comprehensive study of Low-k SiCOH TDDB phenomena and its reliability lifetime model development
- th Annual IEEE international Reliability Physics Symposium, p. 46, 2006.
- (2006) th Annual IEEE international Reliability Physics Symposium , pp. 46
- Chen, F.¹ Bravo, O.² Chanda, K.³ McLaughlin, P.⁴ Sullivam, T.⁵ Goill, J.⁶ Lloyd, J.⁷ Kontra, R.⁸ Aitken, J.⁹

4
- 29744448345
- Study of Cu diffusion in porous dielectrics using secondary-ion-mass- spectrometry
- O. R. Rodriguez, W. N. Gill, J. L. Plawskya, T. Y. Tsui, and S. Grunow, "Study of Cu diffusion in porous dielectrics using secondary-ion-mass- spectrometry," J.Appl. Phys., vol. 98, p. 123514, 2005.
- (2005) J.Appl. Phys , vol.98 , pp. 123514
- Rodriguez, O.R.¹ Gill, W.N.² Plawskya, J.L.³ Tsui, T.Y.⁴ Grunow, S.⁵

5
- 0019656053
- Time-zero dielectric reliability test by a ramp method
- A. Berman, "Time-zero dielectric reliability test by a ramp method," Proc. 19th Annual IEEE International Reliability Physics Symposium, p. 204, 1981.
- (1981) Proc. 19th Annual IEEE International Reliability Physics Symposium , pp. 204
- Berman, A.¹

6
- 84968226687
- Oxide breakdown model for very low voltages, VLSI Technology, 1993
- K. F. Schuegraf and H. Chenming, "Oxide breakdown model for very low voltages," VLSI Technology, 1993. Digest of Technical Papers, p. 43, 1993.
- (1993) Digest of Technical Papers , pp. 43
- Schuegraf, K.F.¹ Chenming, H.²

7
- 84949191369
- Modeling of substrate related extrinsic oxide failure distributions
- th Annual IEEE International Reliability Physics Symposium, p. 393, 2002.
- (2002) th Annual IEEE International Reliability Physics Symposium , pp. 393
- Pompl, T.¹ Kerber, M.² Innertsberger, G.³ Allers, K.H.⁴ Obry, M.⁵ Krasemann, A.⁶ Temmler, D.⁷

8
- 1142276078
- Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to square root E model for silicon nitride MIM capacitor
- K. H. Allers, "Prediction of dielectric reliability from I-V characteristics: Poole-Frenkel conduction mechanism leading to square root E model for silicon nitride MIM capacitor," Microelectronics Reliability, vol. 44, p. 411, 2004.
- (2004) Microelectronics Reliability , vol.44 , pp. 411
- Allers, K.H.¹

9
- 34548708224
- Cu Migration-Induced Failure in Inter-Layer Dielectrics
- th Annual IEEE International Reliability Physics Symposium, 2006.
- (2006) th Annual IEEE International Reliability Physics Symposium
- Hwang, S.-S.¹ Jung, S.-Y.² Jung, J.-K.³ Joo, Y.-C.⁴

10
- 24144462317
- Changes of acceleration behaviour of time-dependent dielectric breakdown by the BEOL process: Indication, for hydrogen-induced transition indominant degradation mechanism
- rd Annual IEEE International Reliability Physics Symposium, p. 388, 2005.
- (2005) rd Annual IEEE International Reliability Physics Symposium , pp. 388
- Pompl, T.¹ Allers, K.-H.² Schwab, R.³ Hoffman, K.⁴ Roehner, M.⁵

11
- 34548797370
- TDDB characteristics of low-k silica-based interconnect dielectrics
- th Annual IEEE International Reliability Physics Symposium, p. 166, 2006.
- (2006) th Annual IEEE International Reliability Physics Symposium , pp. 166
- Kim, J.¹ Ogawa, E.T.² McPherson, J.W.³

13
- 0011076409
- Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown, in SiO/sub 2/ thin films
- J. W. McPherson and H. C. Mogul, "Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown, in SiO/sub 2/ thin films," Journal of Applied Physics, vol. 84, pp. 1513-23, 1998.
- (1998) Journal of Applied Physics , vol.84 , pp. 1513-1523
- McPherson, J.W.¹ Mogul, H.C.²

14
- 84987266075
- W. Weibull, J. Applied Mechanics, vol. 18, p. 293, 1951.
- (1951) J. Applied Mechanics , vol.18 , pp. 293
- Weibull, W.¹

15
- 23944456397
- Reliability analysis, method for low-k interconnect dielectrics breakdown in integrated circuits
- G. S. Haase, E. T. Ogawa, and J. W. McPherson, "Reliability analysis, method for low-k interconnect dielectrics breakdown in integrated circuits," Journal of applied physics, vol. 98, p. 34503, 2005.
- (2005) Journal of applied physics , vol.98 , pp. 34503
- Haase, G.S.¹ Ogawa, E.T.² McPherson, J.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.