Line edge roughness and spacing effect on low-k TDDB characteristics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 132-137

  Chen, F ^a   Lloyd, J R ^b   Chanda, K ^a   Achanta, R ^a   Bravo, O ^a   Strong, A ^a   McLaughlin, P S ^a   Shinosky, M ^a   Sankaran, S ^a   Gebreselasie, E ^a   Stamper, A K ^a   He, Z X ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Cu interconnect; ILD; Line edge roughness; Low k; Macroscopic line to line spacing variation; Microscopic line to line spacing variation; Reliability; Spacing scaling; Time dependent dielectric breakdown

Indexed keywords

CU INTERCONNECT; ILD; LINE EDGE ROUGHNESS; LOW-K; MACROSCOPIC LINE-TO-LINE SPACING VARIATION; MICROSCOPIC LINE-TO-LINE SPACING VARIATION; SPACING SCALING; TIME-DEPENDENT DIELECTRIC BREAKDOWN;

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; EXPERIMENTS; FINITE ELEMENT METHOD; RELIABILITY;

PHOTORESISTS;

EID: 51549112550     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558874     Document Type: Conference Paper

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