Damascene copper integration impact on electomigration and stress migration

Advanced Metallization Conference (AMC)

Volumn , Issue , 2006, Pages 727-733

  Stamper, Anthony K ^a   Baks, H ^a   Cooney, E ^a   Gignac, L ^b   Gill, J ^a   Hu, C K ^b   Kane, T ^a   Liniger, E ^b   Wang, Y Y ^a   Wynne, J ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTOMIGRATION; SIDEWALL COVERAGE; STRESS MIGRATION; COPPER INTEGRATION IMPACT; CU DEPOSITION; CU RECRYSTALLIZATION;

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; COPPER; DEPOSITION; IONIZATION; PHYSICAL VAPOR DEPOSITION; THIN FILMS; WIRE; ANNEALING; ELECTROMIGRATION; ELECTROPLATING; RECRYSTALLIZATION (METALLURGY); STRESS ANALYSIS; TUNGSTEN;

METALLIZING; COPPER;

EID: 33644947733     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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