Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 166-172

  Ogawa, Ennis T ^a   Kim, Jinyoung ^a   Haase, Gad S ^a   Mogul, Homi C ^a   McPherson, Joe W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Current leakage; Dielectric reliability; Field acceleration parameter; Intermetal dielectrics; Intralevel dielectrics; Low k dielectrics; Low k reliability; Percolation model; Porosity; Ramped breakdown; TDDB; Time dependent dielectric breakdown

Indexed keywords

ACTIVATION ENERGY; PERCOLATION (SOLID STATE); POROSITY; POROUS MATERIALS; RELIABILITY; SILICA; SOLVENTS;

CURRENT LEAKAGE; DIELECTRIC RELIABILITY; FIELD ACCELERATION; INTER-METAL DIELECTRICS; LOW K DIELECTRICS; PERCOLATION MODELS; RAMPED BREAKDOWN; TDDB; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84955240546     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197739     Document Type: Conference Paper

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