Time dependent dielectric breakdown characteristics of low-k dielectric (SiOC) over a wide range of test areas and electric fields

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 399-404

  Kim, Jinyoung ^a   Ogawa, Ennis T ^a   McPherson, Joe W ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Area scaling; E model; Field acceleration; Low k dielectric; Parameter; TDDB

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELDS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SILICON WAFERS; THERMOCHEMISTRY;

AREA SCALING; CARBON-DOPED SILICA DIELECTRICS; FIELD ACCELERATION; LOW-K DIELECTRICS; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN;

EID: 34548783296     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369922     Document Type: Conference Paper

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