Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1340-1345

  Noguchi, Junji ^a   Ohashi, Naofumi ^a   Jimbo, Tomoko ^a   Yamaguchi, Hizuru ^a   Takeda, Ken Ichi ^a   Hinode, Kenji ^a  

^a HITACHI LTD   (Japan)

Author keywords

Copper; Dielectric breakdown; Integrated circuit interconnections; Interface phenomena; Surface treatment

Indexed keywords

COPPER; INTEGRATED CIRCUIT MANUFACTURE; METALLIZING; PLASMA HEATING; SURFACE TREATMENT;

PLASMA TREATMENT; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

DIELECTRIC DEVICES;

EID: 0035395901     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930649     Document Type: Article

References (7)

1. Diffusion of copper through dielectric films under bias temperature stress
2. Time-dependent dielectric breakdown of interlevel dielectrics for copper metallization
3. Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure
4. Impact of low pressure long throw sputtering method on submicron copper metallization
5. Complete-abrasive-free process for copper damascene interconnection
6. Electrical leakage at low-K polymide/TEOS interface
7. Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias temperature stress