Selective removal of high-k gate dielectrics

Chemical Engineering Communications

Volumn 196, Issue 12, 2009, Pages 1475-1535

  Shamiryan, D ^a   Baklanov, M ^a   Claes, M ^a   Boullart, W ^a   Paraschiv, V ^a  

^a IMEC   (Belgium)

Author keywords

High k dielectrics; High k etching; Plasma etching; Wet etching

Indexed keywords

DOWN-SCALING; DRY AND WET; EXPERIMENTAL DATA; HIGH DIELECTRIC CONSTANTS; HIGH-K DIELECTRIC; HIGH-K DIELECTRICS; HIGH-K ETCHING; HIGH-K GATE DIELECTRICS; HIGH-K MATERIALS; SELECTIVE REMOVAL; STATE OF THE ART;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MOS CAPACITORS; PLASMA ETCHING; PLASMAS; SILICON COMPOUNDS;

WET ETCHING;

EID: 70349568357     PISSN: 00986445     EISSN: 15635201     Source Type: Journal    
DOI: 10.1080/00986440903155428     Document Type: Article

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