Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 553-563

  Joubert, O ^a   Cunge, G ^a   Pelissier, B ^a   Vallier, L ^a   Kogelschatz, M ^a   Pargon, E ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; INFRARED SPECTROMETERS; INTEGRATED CIRCUIT MANUFACTURE; PERMITTIVITY; PHOTORESISTORS; SILICON WAFERS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHAMBER WALLS; PLASMA SHEATH; SILICON GATE ETCHING; VOLTAGE DROP;

PLASMA ETCHING;

EID: 3142519917     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1697484     Document Type: Article

References (25)

1. ITRS, International Technology Roadmap for Semiconductors (2002).
2. J. A. O'Neill and J. Singh, J. Appl. Phys. 77, 497 (1995).
3. G. C. H. Zau and H. H. Sawin, J. Electrochem. Soc. 139, 250 (1992).
4. S. Xu, Z. Sun, X. Qian, J. Holland, and D. Podlesnik, J. Vac. Sci. Technol. B 19, 166 (2001).
5. A. R. Godfrey, S. J. Ullal, L. B. Braly, E. A. Edelberg, V. Vahedi, and E. S. Aydil, Rev. Sci. Instrum. 72, 3260 (2001).
6. G. Cunge and J. P. Booth, J. Appl. Phys. 85, 3952 (1999).
7. M. Tuda, K. Shintani, and J. Tanimura, Appl. Phys. Lett. 79, 2535 (2001).
8. S. J. Ullal, A. R. Godfrey, E. A. Edelberg, L. B. Braly, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 43 (2002).
9. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16, 270 (1998).
10. S. J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 1195 (2002).
11. S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20, 499 (2002).
12. S. J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. B 20, 1939 (2002).
13. S. Ma, M. Jain, and J. D. Chinn, J. Vac. Sci. Technol. A16, 1440 (1998).
14. G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, and N. Sadeghi, J. Vac. Sci. Technol. B 20, 2137 (2002).
15. M. A. Lieberman and A. J. Lichtenberg, Principle of Plasma Discharges and Material Processing (Wiley, New York, 1994).
16. M. V. Malyshev and V. M. Donnelly, J. Appl. Phys. 90, 1130 (2001).
17. M. W. Kiehlbauch and D. B. Graves, J. Vac. Sci. Technol. A 21, 116 (2003).
18. C. J. Powell and A. Jablonski, NIST electron inelastic mean free path database 1.1 (2000).
19. M. Kogelschatz, G. Cunge, N. Sadeghi, and O. Joubert, Proceedings of Frontiers in Low Temperature Plasma Diagnostics, 3-7 April 2003, Specchia, Italy.
20. L. Vallier, J. Foucher, X. Defter, E. Pargon, O. Joubert, G. Cunge, and T. Lill, J. Vac. Sci. Technol. B 21, 904 (2003).
21. S. Xu, Z. Sun, A. Chen, X. Qian, and D. Podlesnik, J. Vac. Sci. Technol. A 19, 871 (2001).
22. D. J. Thomas, P. Southworth, M. C. Flowers, and R. Greef, J. Vac. Sci. Technol. B 8, 1044 (1990).
23. P. Czuprynski, O. Joubert, L. Vallier, M. Puttock, and M. Heitzmann, J. Vac. Sci. Technol. B 16, 147 (1998).
24. D. Cooperberg, V. Vahedi, and R. A. Gottscho, J. Vac. Sci. Technol. A 20, 1536 (2003).
25. A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B 20, 1077 (2002).