Wet and dry etching of Sc 2 O 3

Applied Surface Science

Volumn 185, Issue 1-2, 2001, Pages 52-59

  Park, P Y ^a   Norasetthekul, S ^a   Lee, K P ^a   Baik, K H ^a   Gila, B P ^a   Shin, J H ^a   Abernathy, C R ^a   Ren, F ^b   Lambers, E S ^a   Pearton, S J ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

Author keywords

Activation energy; Sc 2 O 3 films; Wet and dry etching

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; DRY ETCHING; PLASMA ETCHING; SPUTTERING; THERMAL EFFECTS;

WET ETCHING;

SEMICONDUCTING FILMS;

EID: 0035965971     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00593-1     Document Type: Article

References (22)

1. State of the Art Program on Compound Semiconductors