Thermal response of MOCVD hafnium silicate

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 182-189

  Lysaght, Patrick ^a   Foran, Brendan ^a   Stemmer, Susanne ^b   Bersuker, Gennadi ^a   Bennett, Joe ^a   Tichy, Robin ^a   Larson, Larry ^a   Huff, Howard R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Hafnium silicate; Thermal response

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; NITROGEN; PERMITTIVITY; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THERMAL RESPONSE;

MICROELECTRONICS;

EID: 0141457904     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00295-8     Document Type: Conference Paper

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