Effects of Annealing and Ar Ion Bombardment on the Removal of HfO 2 Gate Dielectric

Electrochemical and Solid-State Letters

Volumn 7, Issue 3, 2004, Pages

  Chen, Jinghao ^a   Yoo, Won Jong ^a   Chan, Daniel S H ^a   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; RAREFACTION;

ANNEALING; ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); ION BOMBARDMENT; PHYSICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; TRANSMISSION ELECTRON MICROSCOPY; VLSI CIRCUITS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 1542470403     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1642577     Document Type: Article

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