High K gate dielectrics for the silicon industry

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 56-60

  Manchanda, L ^a   Busch, B ^a   Green, M L ^a   Morris, M ^a   Van Dover, R B ^a   Kwo, R ^a   Aravamudhan, S ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS SILICON; CHEMICAL INDUSTRY; DIELECTRIC MATERIALS; RECONFIGURABLE HARDWARE; SILICATES; SILICON OXIDES;

ALUMINUM OXIDES; CRITICAL ISSUES; EXPONENTIAL GROWTH; HIGH TEMPERATURE; HIGH- K GATE DIELECTRICS; MULTICOMPONENTS; SELECTION CRITERIA; SILICON INDUSTRY;

GATE DIELECTRICS;

EID: 84954155485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967545     Document Type: Conference Paper

References (12)

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