메뉴 건너뛰기




Volumn 19, Issue 4, 2004, Pages 1149-1156

Etching of zirconium oxide, hafnium oxide, and hafnium silicates in dilute hydrofluoric acid solutions

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HAFNIUM COMPOUNDS; HEAT TREATMENT; HYDROFLUORIC ACID; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SILICA; THICKNESS MEASUREMENT; ZIRCONIA;

EID: 2342537710     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0149     Document Type: Article
Times cited : (37)

References (18)
  • 1
    • 85039531700 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors
    • The International Technology Roadmap for Semiconductors (2001).
    • (2001)
  • 2
    • 0033752184 scopus 로고    scopus 로고
    • Reliability: A possible showstopper for oxide thickness scaling?
    • R. Degraeve, B. Kaczer, and G. Groeseneken, Reliability: A possible showstopper for oxide thickness scaling? Semicon. Sci. Technol. 15, 436 (2000).
    • (2000) Semicon. Sci. Technol. , vol.15 , pp. 436
    • Degraeve, R.1    Kaczer, B.2    Groeseneken, G.3
  • 4
    • 0346534582 scopus 로고    scopus 로고
    • Hafnium and zirconium silicates for advanced gate dielectrics
    • G.D. Wilk, R.M. Wallace, and J.M. Anthony, Hafnium and zirconium silicates for advanced gate dielectrics, J. Appl. Phys. 87, 484 (2000).
    • (2000) J. Appl. Phys. , vol.87 , pp. 484
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 5
    • 0035872897 scopus 로고    scopus 로고
    • High-k gate dielectrics: Current status and materials properties considerations
    • G.D. Wilk, R.M. Wallace, and J.M. Anthony, High-k gate dielectrics: Current status and materials properties considerations, J. Appl. Phys. 89, 5243 (2001).
    • (2001) J. Appl. Phys. , vol.89 , pp. 5243
    • Wilk, G.D.1    Wallace, R.M.2    Anthony, J.M.3
  • 6
    • 0000551766 scopus 로고    scopus 로고
    • Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
    • G.D. Wilk and R.M. Wallace, Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon, Appl. Phys. Lett. 74, 2854 (1999).
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2854
    • Wilk, G.D.1    Wallace, R.M.2
  • 7
    • 0001624638 scopus 로고    scopus 로고
    • Stable zirconium silicate gate dielectrics deposited directly on silicon
    • G.D. Wilk and R.M. Wallace, Stable zirconium silicate gate dielectrics deposited directly on silicon, Appl. Phys. Lett. 76, 112 (2000).
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 112
    • Wilk, G.D.1    Wallace, R.M.2
  • 8
    • 0037955884 scopus 로고    scopus 로고
    • Physical characterization of ultrathin high k dielectrics
    • in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stemmer; Warrendale, PA
    • W. Vandervorst, B. Brijs, H. Bender, O.T. Conard, J. Petry, O. Richard, S. Van Elshocht, A. Delabie, M. Caymax, and S. De Gendt, Physical characterization of ultrathin high k dielectrics, in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stemmer, (Mater. Res. Soc. Symp. Proc. 745, Warrendale, PA, 2003) p. 230.
    • (2003) Mater. Res. Soc. Symp. Proc. , vol.745 , pp. 230
    • Vandervorst, W.1    Brijs, B.2    Bender, H.3    Conard, O.T.4    Petry, J.5    Richard, O.6    Van Elshocht, S.7    Delabie, A.8    Caymax, M.9    De Gendt, S.10
  • 10
    • 0034498420 scopus 로고    scopus 로고
    • Chemical processing and material comparability of high-k dielectric materials for advanced gate stocks
    • (Ultra Clean Processing of Silicon Surfaces 2000)
    • J.J. Guan, G.W. Gale, G. Bersuker, M. Jackson, and H.R. Huff, Chemical processing and material comparability of high-k dielectric materials for advanced gate stocks, Diffusion and Defect Data-Solid State Data, Pt. B: Solid State Phenomena, 76-77 (Ultra Clean Processing of Silicon Surfaces 2000), 19, (2000).
    • (2000) Diffusion and Defect Data-Solid State Data, Pt. B: Solid State Phenomena , vol.76-77 , pp. 19
    • Guan, J.J.1    Gale, G.W.2    Bersuker, G.3    Jackson, M.4    Huff, H.R.5
  • 12
    • 0037504342 scopus 로고    scopus 로고
    • A selective etching process for chemically inert high-k metal oxides
    • in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stememr; Warrendale, PA
    • K.L. Saenger, H.F. Okorn-Schmidt, and C.P. D'Emic, A selective etching process for chemically inert high-k metal oxides, in Novel Materials and Processes for Advanced CMOS, edited by M.I. Gardner, S. De Gendt, J-P. Maria, and S. Stememr, (Mater Res. Soc. Symp. Proc. 745, Warrendale, PA, 2003), p. 29.
    • (2003) Mater Res. Soc. Symp. Proc. , vol.745 , pp. 29
    • Saenger, K.L.1    Okorn-Schmidt, H.F.2    D'Emic, C.P.3
  • 16
    • 2342662752 scopus 로고    scopus 로고
    • STABCAL software
    • Metallurgical Engineering, Montana Tech., Butte, MT 59701, USA
    • Hsin-Hsiung Huang, STABCAL software. Metallurgical Engineering, Montana Tech., Butte, MT 59701, USA.
    • Huang, H.-H.1
  • 17
    • 0034630965 scopus 로고    scopus 로고
    • Etching mechanism of vitreous silicon dioxide in HF-based solutions
    • D.M. Knotter, Etching mechanism of vitreous silicon dioxide in HF-based solutions, J. Am. Chem. Soc. 122, 4345 (2000).
    • (2000) J. Am. Chem. Soc. , vol.122 , pp. 4345
    • Knotter, D.M.1
  • 18
    • 0342524448 scopus 로고
    • - ions at the zirconium dioxide water interface
    • - ions at the zirconium dioxide water interface, J. Radioanal. Nucl. Chem. 125, 393 (1988).
    • (1988) J. Radioanal. Nucl. Chem. , vol.125 , pp. 393
    • Janusz, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.