Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1552-1558

  Chen, Jinghao ^a   Yoo, Won Jong ^a   Tan, Zerlinda Y L ^a   Wang, Yingqian ^a   Chan, Daniel S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOILING POINTS; CURRENT GATE ETCHING; ETCH RESIDUES; VAPOR POINTS;

ANTIREFLECTION COATINGS; BROMINE COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ETCHING; INDUCTIVELY COUPLED PLASMA; NATURAL FREQUENCIES; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; POLYSILICON; SILICA; SILICATES; TERNARY SYSTEMS; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 4344633058     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1705590     Document Type: Conference Paper

References (33)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. International Technology Roadmap for Semiconductors, 2001.
3. B. Brar, G. D. Wilk, and A. C. Seabaugh, Appl. Phys. Lett. 69, 2728 (1996).
4. S. Song et al., Symp. VLSI Tech. Dig. 2000, 190.
5. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2000, 31.
6. M.-Y. Ho et al., Appl. Phys. Lett. 81, 4218 (2002).
7. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2002, 857.
8. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
9. S. Inumiya et al., Symp. VLSI Tech. Dig. 2003, 24.
10. S.-H. Oh, J.-H. Chung, J.-H. Choi, C.-Y. Yoo, Y.-S, Kim, S.-T. Kim, U.-I. Chung, and J.-T. Moon, Symp. VLSI Tech, Dig. 2003, 73.
11. H. Hu et al., IEEE Electron Device Lett. 24, 60 (2002).
12. A. Agarwal et al., Mater. Res. Soc. Symp. Proc. 670, K2.11 (2002).
13. S. Norasetthekul, P. Y. Park, K. H. Baik, K. P. Lee, J. H. Shim, B. S. Jeong, V. Shishodia, D. P. Norton, and S. J. Pearton, Appl. Surf. Sci. 7551, 1 (2001).
14. J. Chen, K. M. Tan, N. Wu, W. J. Yoo, and S. H. D. Chan, J. Vac. Sci. Technol. A 21, 1210 (2003).
15. P. Patnaik, Handbook of Inorganic Chemicals (McGraw-Hill, New York, 2003).
16. D. L. Perry and S. L. Philips, Handbook of Inorganic Compounds (CRC Press, Boca Raton, FL, 1995).
17. O. Kubaschewski and C. B. Alcock, Metallurgical Thermo-chemistry International series on films science and technology Vol. 24, 5th ed. (Pergamon, New York, 1979).
18. J. A. Britten, H. T. Nguyen, S. F. Falabella, B. W. Shore, and M. D. Perry, J. Vac. Sci. Technol. A 14, 2973 (1996).
19. B. V. Crist, Handbook of Monochromatic XPS Spectra: The Elements and Native Oxides (Wiley, New York, 2000).
20. J. F. Moulder, in Handbook of X-Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, edited by J. Chastain (Perkin-Elmer, Eden Prairie, 1992).
21. J. A. Kerr, in CRC Handbook of Chemistry and Physics 1999-2000: A Ready-Reference Book of Chemical and Physical Data (CRC Handbook of Chemistry and Physics), 81st ed., edited by D. R. Lide (CRC Press, Cleveland, 2000).
22. M. S. Joo et al., Jpn. J. Appl. Phys., Part 2 42, L220 (2003).
23. Y. J. Sung, H. S. Kim, Y. H. Lee, J. W Lee, S. H. Chae, Y. J. Park, and G. Y. Yeom, Mater. Sci. Eng., B 82, 50 (2001).
24. J.-H. Lee and M. Ichikawa, J. Vac. Sci. Technol. A 20, 1824 (2002).
25. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
26. R. P. Pezzi, J. Morais, S. R. Dahmen, K. P. Bastos, L. Miotti, G. V. Soares, I. J. R. Baumvol, and F. L. Freire, Jr., J. Vac. Sci. Technol. A 21, 1424 (2003).
27. S. M. Sze, VLSI Technology 2nd ed. (McGraw-Hill, New York, 1988).
28. M. Tuda, K. Shintani, and J. Tanimura, Appl. Phys. Lett. 79, 2535 (2001).
29. H. W. Chen, T. Y. Huang, D. Landheer, X. Wu, S. Moisa, G. I. Sproule, and T.-S. Chao, J. Electrochem. Soc. 149, F49 (2002).
30. L. Desvoivres, L. Valuer, and O. Joubert, J. Vac. Sci. Technol. B 18, 156 (2000).
31. V. M. Donnelly, J. Appl. Phys. 79, 9353 (1996).
32. D. L. Smith and P. G. Saviano, J. Vac. Sci. Technol. 21, 768 (1982).
33. L. Sha, R. Puthenkovilakam, Y.-S. Lin, and J. P. Chang, J. Vac. Sci. Technol. B 21, 2420 (2003).