Wet etch enhancement of HfO2 films by implant processing

Solid State Phenomena

Volumn 92, Issue , 2003, Pages 11-14

  Barnett, Joel ^a   Riley, Deborah ^a   Messina, Troy C ^a   Lysaght, Pat ^a   Carpio, Ron ^a  

^a SEMATECH   (United States)

Author keywords

High K; Wet etch

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DIELECTRIC FILMS; ETCHING; HEAT TREATMENT; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR ORIENTATION; NITROGEN; PERMITTIVITY; SILICON WAFERS;

WET ETCH ENHANCEMENT; WET ETCHABILITY;

HAFNIUM COMPOUNDS;

EID: 0038068877     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (2)

1. K. Derbyshire: 'Sub-100 nm transistors defy conventional wisdom', Semiconductor Magazine, p27, Feb 2002.
2. Y. Kim et al., 'Poly-Si gate MOS-transistors with a variable Si-content MOCVD Hf-oxide layer as high-k gate-dielectric' IEDM Tech. Dig., p455, 2001.