Effect of gas mixing ratio on etch behavior of Zr O2 thin films in B Cl3 He inductively coupled plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 3, 2008, Pages 344-351

  Kim, Mansu ^a   Min, Nam Ki ^a   Yun, Sun Jin ^b   Lee, Hyun Woo ^c   Efremov, Alexander ^d   Kwon, Kwang Ho ^a  

^a Korea University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Hanseo University   (South Korea)

^d IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; LANGMUIR PROBES; PARAMETER ESTIMATION; PLASMA DIAGNOSTICS; THIN FILMS;

ETCH BEHAVIOR; GAS PRESSURE; PLASMA PARAMETERS;

ZIRCONIUM COMPOUNDS;

EID: 42949111656     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2891255     Document Type: Article

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