Effect of postdeposition anneal conditions on defect density of HfO 2 layers measured by wet etching

Journal of the Electrochemical Society

Volumn 151, Issue 11, 2004, Pages

  Claes, M ^a   De Gendt, S ^c   Witters, T ^a   Kaushik, V ^a   Conard, T ^a   Zhao, C ^a   Manabe, Y ^b   Delabie, A ^a   Rohr, E ^a   Chen, J ^a   Tsai, W ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b HITACHI LTD   (Japan)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT;

DEFECT DENSITY; DIELECTRIC LAYERS; POSTDEPOSITION; WET ETCHING;

HAFNIUM COMPOUNDS;

EID: 19944408203     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1802134     Document Type: Article

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