A CMOS process-compatible wet-etching recipe for the high-k gate dielectrics Pr2O3 and Pr2-xTixO 3

Journal of the Electrochemical Society

Volumn 152, Issue 6, 2005, Pages

  Mane, A U ^a   Wenger, Ch ^a   Schroeder, T ^a   Zaumseil, P ^a   Lippert, G ^a   Weidner, G ^a   Mussig H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ETCHING; GATES (TRANSISTOR); TITANIUM COMPOUNDS; WETTING;

ETCHANT; GATE DIELECTRICS; GATE OXIDE LAYERS; WET-ETCHING;

PRASEODYMIUM COMPOUNDS;

EID: 22544473634     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1914751     Document Type: Article

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