On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma

Microelectronic Engineering

Volumn 85, Issue 2, 2008, Pages 348-354

  Kim, Mansu ^a   Min, Nam Ki ^a   Yun, Sun Jin ^b   Lee, Hyun Woo ^c   Efremov, Alexander ^d   Kwon, Kwang Ho ^a  

^a Korea University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Hanseo University   (South Korea)

^d IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

BCl3 Ar plasma modeling; Dissociation; Etch mechanism; Etch rate; Ionization; ZrO2

Indexed keywords

ETCHING; MECHANISMS;

ETCHING MECHANISMS;

ZIRCONIUM ALLOYS;

EID: 40249108240     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.07.009     Document Type: Article

References (37)

1. 2 and high-k materials for ULSI gate dielectrics vol. 567 (1999), Materials Research Society, Warrendale
2. Chaneliere C., Autran J.L., Devine R.A., and Balland B. Mater. Sci. Eng. R 22 (1998) 269
3. Chang J.P., Lin Y.-S., and Chu K. J. Vac. Sci. Technol. B 19 (2001) 1782
4. Cho B.-O., Wang J., Sha L., and Chang J.P. Appl. Lett. 80 (2001) 1052
5. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 87 (2000) 484
6. Guo X., Wang X., Luo Z., Ma T.P., and Tamagawa T. Tech. Gig. Int. Electro Dev. Meet. (1999) 137
7. Sha L., Cho B.-O., and Chang J.P. J. Vac. Sci. Technol. A 20 (2002) 1525
8. Sha L., and Chang J.P. J. Vac. Sci. Technol. A 21 (2003) 1915
9. Sha L., and Chang J.P. J. Vac. Sci. Technol. A 22 (2004) 88
10. Pelhos K., Donnelly V., Kornblit A., Green M., Dover R.V., Manchanda L., Hu Y., Morris M., and Bower E. J. Vac. Sci. Technol. A 19 (2001) 1361
11. Stafford L., and Margot J. J. Vac. Sci. Technol. A 23 (2005) 720
12. Rooth J.R. Industrial Plasma Engineering (1995), IOP Publishing Ltd., Philadelphia
13. Yun S.J., Lim J.W., and Lee J.H. Electrochem. Solid-State Lett. 8 (2005) F47
14. Lee C., and Lieberman M.A. J. Vac. Sci. Technol. A 13 (1995) 368
15. Lieberman M.A., and Ashida S. Plasma Sources Sci. Technol. 5 (1996) 145
16. Meeks E., Ho P., Ting A., and Buss R.J. J. Vac. Sci. Technol. A 16 (1998) 2227
17. Wainman P.N., Lieberman M.A., Lichtenberg A.J., Stewart R.A., and Lee C. J. Vac. Sci. Technol. A 13 (1995) 2464
18. Nordheden K.J., and Sia J.F. J. Appl. Phys. 94 (2003) 2199
19. Kim H.S., Yeom G.Y., Lee J.W., and Kim T.I. J. Vac. Sci. Technol. A 17 (1999) 2214
20. Ramamurthi B., and Economou D.J. J. Vac. Sci. Technol. A 20 (2002) 467
21. Kota G.P., Coburn J.W., and Graves D.B. J. Vac. Sci. Technol. A 16 (1998) 270
22. Kim G.H., Kim C.I., and Efremov A.M. Vacuum 79 (2005) 231
23. Malyshev M.V., and Donnelly V.M. J. Appl. Phys. 87 (2000) 1642
24. Malyshev M.V., and Donnelly V.M. J. Appl. Phys. 90 (2001) 1130
25. Lieberman M.A., and Lichtenberg A.J. Principles of Plasma Discharges and Materials Processing (1994), John Wiley & Sons Inc., New York
26. Lide D.R. Handbook of Chemistry and Physics (1998-1999), CRC Press, New York
27. Fuller N.C.M., Donnelly V.M., and Herman I.P. J. Vac. Sci. Technol. A 20 (2002) 170
28. Efremov A.M., Kim D.P., and Kim C.I. J. Vac. Sci. Technol. A 21 (2003) 1568
29. Efremov A.M., Kim G.H., Kim J.G., Bogomolov A.V., and Kim C.I. Microelectron. Eng. 84 (2007) 136
30. Kimura T., and Ohe K. Plasma Sources Sci. Technol. 8 (1999) 553
31. Denpoh K., and Nanbu K. J. Vac. Sci. Technol. A 16 (1998) 1201
32. Gray D.C., Tepermeister I., and Sawin H.H. J. Vac. Sci. Technol. A 11 (1993) 1243
33. Lee C., Graves D.B., and Lieberman M.A. Plasma Chem. Plasma Proc. 16 (1996) 99
34. Efremov A.M., Kim D.P., and Kim C.I. IEEE Trans. Plasma Sci. 32 (2004) 1344
35. Gottscho R.A., Jurgensen C.W., and Vitkavage D.J. J. Vac. Sci. Technol. B 10 (1992) 2133
36. Vitale S.A., Chae H., and Sawin H.H. J. Vac. Sci. Technol. A 19 (2001) 2197
37. Abdollahi-Alibeik S., McVittie J.P., Saraswat K.C., Sukharev V., and Schoenborn P. J. Vac. Sci. Technol. A 17 (1999) 2485