Profile control of novel non-Si gates using B Cl3 N2 plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 3, 2007, Pages 739-744

  Shamiryan, Denis ^a   Paraschiv, Vasile ^a   Eslava Fernandez, Salvador ^a   Demand, Marc ^a   Baklanov, Mikhail ^a   Beckx, Stephan ^a   Boullart, Werner ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; PLASMAS; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

DEPOSITION RATE; GATE PATTERNING; PROFILE CONTROL;

GATES (TRANSISTOR);

EID: 34249871357     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2731333     Document Type: Article

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