Mechanisms and selectivity for etching of Hf O2 and Si in B Cl3 plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 597-604

  Wang, Chunyu ^a   Donnelly, Vincent M ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMISORPTION; ETCHING; HAFNIUM; HAFNIUM COMPOUNDS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NONMETALS; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; PLASMA ETCHING; PLASMAS; POLYSILICON; SILICON; SPUTTERING; STOICHIOMETRY; TELEMETERING SYSTEMS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON-CONTAINING; CHEMICAL SPUTTERING; ETCHING RATES; HF O2 FILMS; HIGH DIELECTRIC CONSTANT (HIGH K); LOW ACTIVATION; LOW TEMPERATURE (LTR); POLY-SI; PRODUCT REMOVAL; SUBSTRATE TEMPERATURE (ST); SURFACE LAYERING; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

CHEMICAL ACTIVATION;

EID: 46449124156     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2938396     Document Type: Article

References (45)

1. The International Technology Roadmap for Semiconductor, Semiconductor Industry Association, http://public.itrs.net, 2006.
2. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
5. K. Takahashi and K. Ono, J. Vac. Sci. Technol. A 24, 437 (2006).
6. M. H́lot, T. Chevolleau, L. Vallier, O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, and T. Lill, J. Vac. Sci. Technol. A 24, 30 (2006).
7. T. Maeda, Jpn. J. Appl. Phys., Part 1 43, 1864 (2004).
8. S. Norasetthekul, P. Y. Park, K. H. Baik, K. P. Lee, J. H. Shin, B. S. Jeong, V. Shishodia, D. P. Norton, and S. J. Pearton, Appl. Surf. Sci. 187, 75 (2002).
9. K. Pelhos, J. Vac. Sci. Technol. A 19, 1361 (2001).
10. L. Sha, B. Cho, and J. P. Chang, J. Vac. Sci. Technol. A 20, 1525 (2002).
11. L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 21, 1915 (2003).
12. L. Sha and J. P. Chang, Electrochemical Society Proceedings, 2003 (unpublished), Vol. 13, p. 20.
13. L. Sha and J. P. Chang, J. Vac. Sci. Technol. A 22, 88 (2004).
14. K. Ono, K. Nakamura, T. Kitagawa, K. Osari, and K. Takahashi, Vacuum 80, 761 (2006).
15. T. Kitagawa, K. Nakamura, K. Osari, K. Takahashi, K. Ono, M. Oosawa, S. Hasaka, and M. Inoue, Jpn. J. Appl. Phys., Part 2 45, L297 (2006).
16. L. Stafford, S. J. Pearton, and J. Margot, J. Appl. Phys. 100, 063309 (2006).
17. R. Ramos, G. Cunge, and O. Joubert, J. Vac. Sci. Technol. A 25, 290 (2007).
18. E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Vallier, O. Joubert, and T. Lill, J. Vac. Sci. Technol. B 25, 1640 (2007).
19. K. V. Guinn and V. M. Donnelly, J. Appl. Phys. 75, 2227 (1994).
20. N. Layadi, V. M. Donnelly, and J. T. C. Lee, J. Appl. Phys. 81, 6738 (1997).
21. K. H. A. Bogart and V. M. Donnelly, J. Appl. Phys. 87, 8351 (2000).
22. C. Wang and V. M. Donnelly, J. Vac. Sci. Technol. B 23, 547 (2005).
23. C. Wang and V. M. Donnelly, J. Vac. Sci. Technol. A 24, 41 (2006).
24. L. Xu, D. J. Economou, V. M. Donnelly, and P. Ruchhoeft, Appl. Phys. Lett. 87, 041502 (2005).
25. K. V. Guinn, C. C. Cheng, and V. M. Donnelly, J. Vac. Sci. Technol. B 13, 214 (1995).
26. T. Panagopoulos and D. J. Economou, J. Appl. Phys. 85, 3435 (1999).
27. E. A. Edelberg and E. S. Aydil, J. Appl. Phys. 86, 4799 (1999).
28. V. M. Donnelly, J. Vac. Sci. Technol. A 14, 1076 (1996).
29. M. V. Malyshev and V. M. Donnelly, J. Appl. Phys. 88, 6207 (2000).
30. K. K. Baeck and R. J. Bartlett, J. Chem. Phys. 106, 4604 (1997).
31. M. Suto, C. Ye, J. C. Han, and L. C. Lee, J. Chem. Phys. 89, 6653 (1988).
32. L. C. Lee, J. C. Han, and M. Suto, J. Chem. Phys. 91, 2036 (1989).
33. K. J. Boyle, D. P. Seccombe, R. P. Tuckett, H. Baumgartel, and H. W. Jochims, J. Phys. B 32, 2569 (1999).
34. M. V. Malyshev and V. M. Donnelly, J. Vac. Sci. Technol. A 15, 550 (1997).
35. P. G. Gilbert, R. B. Siegel, and K. Becker, Phys. Rev. A 41, 5594 (1990).
36. I. Tokue, M. Kudo, M. Kusakabe, T. Honda, and Y. Ito, J. Chem. Phys. 96, 8889 (1992).
37. J. E. Chilton, J. B. Boffard, R. S. Schappe, and C. C. Lin, Phys. Rev. A 57, 267 (1998).
38. V. M. Donnelly, J. Phys. D 37, R217 (2004).
39. P. J. Marchalant and K. Bartschat, J. Phys. B 30, 4373 (1997).
40. L. Morgan (private communication).
41. V. M. Donnelly, F. P. Klemens, T. W. Sorsch, G. L. Timp, and F. H. Baumann, Appl. Phys. Lett. 74, 1260 (1999).
42. A. A. Palko, A. D. Ryon, and D. W. Kuhn, J. Phys. Chem. 62, 319 (1958).
43. K. Tokunaga, F. C. Redeker, D. A. Danner, and D. W. Hess, J. Electrochem. Soc. 128, 851 (1981).
44. CRC Handbook of Chemistry and Physics, 79th ed. (CRC, Boca Raton, FL, 2000).
45. K. H. A. Bogart and V. M. Donnelly, J. Appl. Phys. 86, 1822 (1999).