Review of device and reliability physics of dielectrics in electrostatically driven MEMS devices

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 190-202

  De Groot, Wilhelmus Adrianus ^a   Webster, James R ^a   Felnhofer, Daniel ^a   Gusev, Evgeni P ^a  

^a QUALCOMM INC   (United States)

Author keywords

Dielectric materials; Microelectromechanical devices; Reliability testing

Indexed keywords

APPLIED VOLTAGES; CHARACTERISTIC LENGTH; CHARGE ACCUMULATION; CHARGE TRAP; DEFECT SITES; DEVICE FAILURES; DEVICE PERFORMANCE; DEVICE RELIABILITY; DIELECTRIC BREAKDOWNS; ELECTRICAL STRESS; ELECTROSTATICALLY DRIVEN; FAILURE MECHANISM; FAILURE RATE; INTERFACIAL SURFACE; LATERAL DIMENSION; MATERIAL PROPERTY; MEMSDEVICES; MICROELECTROMECHANICAL SYSTEMS; MULTIPLE FUNCTION; ORDER OF MAGNITUDE; RELIABILITY PERFORMANCE; RELIABILITY TESTING; STRUCTURAL MATERIALS;

BUILDING MATERIALS; CERAMIC CAPACITORS; COMPOSITE MICROMECHANICS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; MATERIALS TESTING; MEMS; MICROELECTROMECHANICAL DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SURFACES;

DIELECTRIC MATERIALS;

EID: 67650441911     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2020565     Document Type: Article

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